Samenvatting
Hexagonal SiGe-2H has been recently shown to have a direct bandgap, and holds the promise to be compatible with silicon technology. Hexagonal Si and Ge have been grown on an epitaxial lattice matched template consisting of wurtzite GaP and GaAs, respectively. Here, we present the growth of hexagonal Si and SiGe nanowire branches grown from a wurtzite stem by the vapor-liquid-solid growth mode, which is substantiated by in situ transmission electron microscopy. We show that the composition can be tuned through the whole range of stoichiometry from Si to Ge, and the possibility to realize Si and SiGe heterostructures in these branches.
| Originele taal-2 | Engels |
|---|---|
| Artikelnummer | 015601 |
| Aantal pagina's | 8 |
| Tijdschrift | Nanotechnology |
| Volume | 34 |
| Nummer van het tijdschrift | 1 |
| DOI's | |
| Status | Gepubliceerd - 20 aug. 2023 |
Bibliografische nota
Funding Information:We would like to thank P J van Veldhoven for technical support at the MOVPE reactor, A Cavalli, L Gagliano, and M Y Swinkels for nanoimprint preparation, M J Brett for valuable discussions, and G Badawy for designing the figures. This work was supported by the Dutch Organization for Scientific Research (NWO-VICI 700.10.441), and the European Union’s Horizon 2020 research and innovation program under grant agreement number 964191 (Opto Silicon). Solliance and the province of Noord-Brabant are acknowledged for funding the TEM facility. This project has received funding from the French National Research Agency (ANR) under the grant ANR-17-CE030–0014–01 (HEXSIGE). We acknowledge the ANR for funding the NANOMAX ETEM through the TEMPOS grant (10-EQPX-0050)). We acknowledge Odile Stephan leader of TEMPOS and Jean Luc Maurice manager of NANOMAX. We wish to particularly acknowledge Ileana Florea and Federico Panceira for the technical assistance during experiments. Thanks are due to the CIMEX at École polytechnique (Palaiseau, France) for hosting the NANOMAX microscope.
Publisher Copyright:
© 2022 The Author(s). Published by IOP Publishing Ltd.