Growth of InGaAsN/InP structures by chemical beam epitaxy

M.R. Leijs; M. Buda; A.Y. Silov; H. Vonk; J.H. Wolter

Growth of InGaAsN/InP structures by chemical beam epitaxy

M.R. Leijs, M. Buda, A.Y. Silov, H. Vonk, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

In III-V semiconductors incorporation of small amounts of nitrogen cause a relatively large bandgap reduction. The problem of InGaAsN is the decrease in luminescence with nitrogen content above 1 - 2%.We have grown a.o. In0.65Ga0.35As0.985N0.015 quantum wells. The as-grown samples show poor photoluminescence at 4K but after a high temperature anneal clear peaks are observed. In comparision to ternary layers of In0.65Ga0.35As, the bandgap has decreased by approximately 70 meV due to 1.4 % of nitrogen. A further increase in the nitrogen content could result in layers with a bandgap of 800 meV at room temperature (l = 1.55 mm).

Originele taal-2	Engels
Titel	Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands
Redacteuren	X.J.M. Leijtens, J.H. Besten, den
Plaats van productie	Delft
Uitgeverij	Technische Universiteit Delft
Pagina's	203-206
ISBN van geprinte versie	90-9014260-6
Status	Gepubliceerd - 2000
Evenement	5th Annual Symposium of the IEEE/LEOS Benelux Chapter - Delft, Nederland Duur: 30 okt. 2000 → 30 okt. 2000

Congres

Congres	5th Annual Symposium of the IEEE/LEOS Benelux Chapter
Land/Regio	Nederland
Stad	Delft
Periode	30/10/00 → 30/10/00

Citeer dit

@inproceedings{96a867992afd48b6b1285e9b7505b837,

title = "Growth of InGaAsN/InP structures by chemical beam epitaxy",

abstract = "In III-V semiconductors incorporation of small amounts of nitrogen cause a relatively large bandgap reduction. The problem of InGaAsN is the decrease in luminescence with nitrogen content above 1 - 2%.We have grown a.o. In0.65Ga0.35As0.985N0.015 quantum wells. The as-grown samples show poor photoluminescence at 4K but after a high temperature anneal clear peaks are observed. In comparision to ternary layers of In0.65Ga0.35As, the bandgap has decreased by approximately 70 meV due to 1.4 % of nitrogen. A further increase in the nitrogen content could result in layers with a bandgap of 800 meV at room temperature (l = 1.55 mm).",

author = "M.R. Leijs and M. Buda and A.Y. Silov and H. Vonk and J.H. Wolter",

year = "2000",

language = "English",

isbn = "90-9014260-6",

pages = "203--206",

editor = "X.J.M. Leijtens and {Besten, den}, J.H.",

booktitle = "Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands",

publisher = "Technische Universiteit Delft",

address = "Netherlands",

note = "5th Annual Symposium of the IEEE/LEOS Benelux Chapter ; Conference date: 30-10-2000 Through 30-10-2000",

}

Leijs, MR, Buda, M, Silov, AY, Vonk, H & Wolter, JH 2000, Growth of InGaAsN/InP structures by chemical beam epitaxy. in XJM Leijtens & JH Besten, den (uitgave), Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands. Technische Universiteit Delft, Delft, blz. 203-206, 5th Annual Symposium of the IEEE/LEOS Benelux Chapter, Delft, Nederland, 30/10/00.

Growth of InGaAsN/InP structures by chemical beam epitaxy. / Leijs, M.R.; Buda, M.; Silov, A.Y. et al.
Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands. uitgave / X.J.M. Leijtens; J.H. Besten, den. Delft: Technische Universiteit Delft, 2000. blz. 203-206.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Growth of InGaAsN/InP structures by chemical beam epitaxy

AU - Leijs, M.R.

AU - Buda, M.

AU - Silov, A.Y.

AU - Vonk, H.

AU - Wolter, J.H.

PY - 2000

Y1 - 2000

N2 - In III-V semiconductors incorporation of small amounts of nitrogen cause a relatively large bandgap reduction. The problem of InGaAsN is the decrease in luminescence with nitrogen content above 1 - 2%.We have grown a.o. In0.65Ga0.35As0.985N0.015 quantum wells. The as-grown samples show poor photoluminescence at 4K but after a high temperature anneal clear peaks are observed. In comparision to ternary layers of In0.65Ga0.35As, the bandgap has decreased by approximately 70 meV due to 1.4 % of nitrogen. A further increase in the nitrogen content could result in layers with a bandgap of 800 meV at room temperature (l = 1.55 mm).

AB - In III-V semiconductors incorporation of small amounts of nitrogen cause a relatively large bandgap reduction. The problem of InGaAsN is the decrease in luminescence with nitrogen content above 1 - 2%.We have grown a.o. In0.65Ga0.35As0.985N0.015 quantum wells. The as-grown samples show poor photoluminescence at 4K but after a high temperature anneal clear peaks are observed. In comparision to ternary layers of In0.65Ga0.35As, the bandgap has decreased by approximately 70 meV due to 1.4 % of nitrogen. A further increase in the nitrogen content could result in layers with a bandgap of 800 meV at room temperature (l = 1.55 mm).

M3 - Conference contribution

SN - 90-9014260-6

SP - 203

EP - 206

BT - Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands

A2 - Leijtens, X.J.M.

A2 - Besten, den, J.H.

PB - Technische Universiteit Delft

CY - Delft

T2 - 5th Annual Symposium of the IEEE/LEOS Benelux Chapter

Y2 - 30 October 2000 through 30 October 2000

ER -

Growth of InGaAsN/InP structures by chemical beam epitaxy

Samenvatting

Congres

Vingerafdruk

Citeer dit