Growth of InGaAsN/InP structures by chemical beam epitaxy

M.R. Leijs, M. Buda, A.Y. Silov, H. Vonk, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

In III-V semiconductors incorporation of small amounts of nitrogen cause a relatively large bandgap reduction. The problem of InGaAsN is the decrease in luminescence with nitrogen content above 1 - 2%.We have grown a.o. In0.65Ga0.35As0.985N0.015 quantum wells. The as-grown samples show poor photoluminescence at 4K but after a high temperature anneal clear peaks are observed. In comparision to ternary layers of In0.65Ga0.35As, the bandgap has decreased by approximately 70 meV due to 1.4 % of nitrogen. A further increase in the nitrogen content could result in layers with a bandgap of 800 meV at room temperature (l = 1.55 mm).
Originele taal-2Engels
TitelProceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands
RedacteurenX.J.M. Leijtens, J.H. Besten, den
Plaats van productieDelft
UitgeverijDelft University of Technology
Pagina's203-206
ISBN van geprinte versie90-9014260-6
StatusGepubliceerd - 2000
Evenement5th Annual Symposium of the IEEE/LEOS Benelux Chapter - Delft, Nederland
Duur: 30 okt 200030 okt 2000

Congres

Congres5th Annual Symposium of the IEEE/LEOS Benelux Chapter
LandNederland
StadDelft
Periode30/10/0030/10/00

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  • Citeer dit

    Leijs, M. R., Buda, M., Silov, A. Y., Vonk, H., & Wolter, J. H. (2000). Growth of InGaAsN/InP structures by chemical beam epitaxy. In X. J. M. Leijtens, & J. H. Besten, den (editors), Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands (blz. 203-206). Delft University of Technology.