Growth of high quality of Ga-Polar GaN layers on GaN substrates after novel reactive ion etching

J.L. Weyher, A.R.A. Zauner, P.D. Brown, F. Karouta, A. Barcz, M. Wojdak, S. Porowski

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Originele taal-2Engels
Titel3rd International Conference on Nitride Semiconductors
Pagina's139-
StatusGepubliceerd - 1999
Evenement3rd International Conference on Nitride Semiconductors, 1999 - Montpellier, Frankrijk
Duur: 5 jul 19999 jul 1999

Congres

Congres3rd International Conference on Nitride Semiconductors, 1999
Land/RegioFrankrijk
StadMontpellier
Periode5/07/999/07/99
Ander3rd International Conference on Nitride Semiconductors, Montpellier, France, 5-9 July

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