@inproceedings{2ff4f43f276b43088fa5ebdd34bbf8ee,
title = "Growth of high quality of Ga-Polar GaN layers on GaN substrates after novel reactive ion etching",
author = "J.L. Weyher and A.R.A. Zauner and P.D. Brown and F. Karouta and A. Barcz and M. Wojdak and S. Porowski",
year = "1999",
language = "English",
pages = "139--",
booktitle = "3rd International Conference on Nitride Semiconductors",
note = "3rd International Conference on Nitride Semiconductors, 1999 ; Conference date: 05-07-1999 Through 09-07-1999",
}