Projecten per jaar
Samenvatting
Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys
grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell
nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes
strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices
grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell
nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes
strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices
| Originele taal-2 | Engels |
|---|---|
| Pagina's (van-tot) | 1538-1544 |
| Aantal pagina's | 7 |
| Tijdschrift | Nano Letters |
| Volume | 17 |
| Nummer van het tijdschrift | 3 |
| DOI's | |
| Status | Gepubliceerd - mrt. 2017 |
Vingerafdruk
Duik in de onderzoeksthema's van 'Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays'. Samen vormen ze een unieke vingerafdruk.Projecten
- 1 Actief
-
Zwaartekracht PSN Research Centre for Integrated Nanophotonics
Fiore, A. (Project Manager), Petruzzella, M. (Projectmedewerker), Curto, A. G. (Projectmedewerker), Godiksen, R. H. (Projectmedewerker), Picelli, L. (Projectmedewerker), Smit, M. (Projectmedewerker), Al-Daffaie, S. (Projectmedewerker), Banfi, E. (Projectmedewerker), van Elst, D. M. J. (Projectmedewerker), Verstijnen, T. J. F. (Projectmedewerker), Perez Sosa, M. (Projectmedewerker), Liang, M. (Projectmedewerker), van Veldhoven, P. J. (Projectmedewerker), Pagliano, F. (Projectmedewerker), Buntinx, S. (Projectmedewerker), Koenraad, P. M. (Projectmedewerker) & Silov, A. Y. (Projectmedewerker)
1/01/14 → 31/01/25
Project: First tier