Good surface passivation of C-Si by high rate plasma deposited silicon oxide

B. Hoex, F.J.J. Peeters, M. Creatore, M.D. Bijker, W.M.M. Kessels, M.C.M. Sanden, van de

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

4 Citaten (Scopus)

Samenvatting

Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC
Originele taal-2Engels
TitelConference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Plaats van productiePiscataway, NJ, USA
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1134-1137
ISBN van geprinte versie1-424-40016-3
DOI's
StatusGepubliceerd - 2006
Evenementconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 -
Duur: 1 jan 2006 → …

Congres

Congresconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Periode1/01/06 → …
AnderWCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

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