Good surface passivation of C-Si by high rate plasma deposited silicon oxide

B. Hoex; F.J.J. Peeters; M. Creatore; M.D. Bijker; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1109/WCPEC.2006.279361

Good surface passivation of C-Si by high rate plasma deposited silicon oxide

B. Hoex, F.J.J. Peeters, M. Creatore, M.D. Bijker, W.M.M. Kessels, M.C.M. Sanden, van de

Plasma & Materials Processing

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

4 Citaten (Scopus)

Samenvatting

Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC

Originele taal-2	Engels
Titel	Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Plaats van productie	Piscataway, NJ, USA
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1134-1137
ISBN van geprinte versie	1-424-40016-3
DOI's	https://doi.org/10.1109/WCPEC.2006.279361
Status	Gepubliceerd - 2006
Evenement	conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 - Duur: 1 jan 2006 → …

Congres

Congres	conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Periode	1/01/06 → …
Ander	WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

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10.1109/WCPEC.2006.279361

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Citeer dit

Hoex, B., Peeters, F. J. J., Creatore, M., Bijker, M. D., Kessels, W. M. M., & Sanden, van de, M. C. M. (2006). Good surface passivation of C-Si by high rate plasma deposited silicon oxide. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006 (blz. 1134-1137). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WCPEC.2006.279361

Hoex, B. ; Peeters, F.J.J. ; Creatore, M. ; Bijker, M.D. ; Kessels, W.M.M. ; Sanden, van de, M.C.M. / Good surface passivation of C-Si by high rate plasma deposited silicon oxide. Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers, 2006. blz. 1134-1137

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title = "Good surface passivation of C-Si by high rate plasma deposited silicon oxide",

abstract = "Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC",

author = "B. Hoex and F.J.J. Peeters and M. Creatore and M.D. Bijker and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2006",

doi = "10.1109/WCPEC.2006.279361",

language = "English",

isbn = "1-424-40016-3",

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booktitle = "Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 ; Conference date: 01-01-2006",

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Hoex, B, Peeters, FJJ, Creatore, M, Bijker, MD, Kessels, WMM & Sanden, van de, MCM 2006, Good surface passivation of C-Si by high rate plasma deposited silicon oxide. in Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Institute of Electrical and Electronics Engineers, Piscataway, NJ, USA, blz. 1134-1137, conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12, 1/01/06. https://doi.org/10.1109/WCPEC.2006.279361

Good surface passivation of C-Si by high rate plasma deposited silicon oxide. / Hoex, B.; Peeters, F.J.J.; Creatore, M.; Bijker, M.D.; Kessels, W.M.M.; Sanden, van de, M.C.M.

Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers, 2006. blz. 1134-1137.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Hoex, B.

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AU - Sanden, van de, M.C.M.

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N2 - Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC

AB - Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC

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BT - Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006

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Hoex B, Peeters FJJ, Creatore M, Bijker MD, Kessels WMM , Sanden, van de MCM. Good surface passivation of C-Si by high rate plasma deposited silicon oxide. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers. 2006. blz. 1134-1137 https://doi.org/10.1109/WCPEC.2006.279361