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Global view of complicated dynamics in optically injected semiconductor laser

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Samenvatting

We use advanced techniques from bifurcation theory to examine the dynamics of single-mode semiconductor lasers with optical injection, modeled by three-dimensional rate equations. Key bifurcations, namely saddle-node, Hopf, period-doubling, saddle-node of limit cycle and torus bifurcations, are followed over a wide range of injection strengths and detunings for different fixed values of the linewidth enhancement factor (alpha) . Combining the stability diagram in parameter space with phase portraits provides a global and detailed view of complex dynamics of injected semi-conductor lasers. In particular, we concentrate here on different routes to phase locking, which can be surprisingly complicated. Our analysis reveals many regions of chaotic behavior and multistability in good agreement with experimental studies.
Originele taal-2Engels
TitelPhysics and simulation of optoelectronic devices VIII, 24 - 28 January 2000, San Jose, California
RedacteurenR.H. Binder, P. Blood, M. Osinski
Plaats van productieBellingham
UitgeverijSPIE
Pagina's602-611
ISBN van geprinte versie0-8194-3561-9
DOI's
StatusGepubliceerd - 2000
EvenementPhysics and Simulation of Optoelectronic Devices VIII - San Jose, Verenigde Staten van Amerika
Duur: 24 jan. 200028 jan. 2000

Publicatie series

NaamProceedings of SPIE
Volume3944
ISSN van geprinte versie0277-786X

Congres

CongresPhysics and Simulation of Optoelectronic Devices VIII
Land/RegioVerenigde Staten van Amerika
StadSan Jose
Periode24/01/0028/01/00
AnderPhysics and simulation of optoelectronic devices VIII

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