GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

E.P. Smakman, J.K. Garleff, R.J. Young, M. Hayne, P. Rambabu, P.M. Koenraad

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

35 Citaten (Scopus)
74 Downloads (Pure)

Samenvatting

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.
Originele taal-2Engels
Artikelnummer142116
Pagina's (van-tot)142116-1/3
Aantal pagina's3
TijdschriftApplied Physics Letters
Volume100
Nummer van het tijdschrift14
DOI's
StatusGepubliceerd - 2012

Vingerafdruk Duik in de onderzoeksthema's van 'GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy'. Samen vormen ze een unieke vingerafdruk.

Citeer dit