Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures

P. Borri, V. Cesaria, M. Rossetti, A. Fiore, W. Langbein

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300K to 20K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time resolution was used. The comparison shows that in the gain regime at high temperatures the recovery dynamics of the p-doped sample is slower than in the undoped device operating at the same modal gain, due to a reduced electron reservoir in the excited states. Conversely, at 20K the initial gain dynamics is faster in the p-doped device due to hole-hole scattering. © 2009 SPIE.
Originele taal-2Engels
TitelPhysics and Simulation of Optoelectronic Devices XVII, San Jose, CA
Plaats van productieBellingham
UitgeverijSPIE
Pagina's72110Z-
DOI's
StatusGepubliceerd - 2009

Publicatie series

NaamProceedings of SPIE
Volume7211
ISSN van geprinte versie0277-786X

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