From the bottom-up: toward area-selective atomic layer deposition with high selectivity

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Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

Originele taal-2Engels
Pagina's (van-tot)2-12
Aantal pagina's11
TijdschriftChemistry of Materials
Volume31
Nummer van het tijdschrift1
Vroegere onlinedatum19 dec 2018
DOI's
StatusGepubliceerd - 8 jan 2019

Vingerafdruk

Atomic layer deposition
Level control
Processing
Nanotechnology
Etching
Momentum
Semiconductor materials
Catalysts

Citeer dit

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abstract = "Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.",
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From the bottom-up: toward area-selective atomic layer deposition with high selectivity. / Mackus, Adriaan J.M. (Corresponding author); Merkx, Marc J.M.; Kessels, Wilhelmus M.M.

In: Chemistry of Materials, Vol. 31, Nr. 1, 08.01.2019, blz. 2-12.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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