Formation of SiO2 buffer layer for LiNbO3 thin films growth

Z.E. Vakulov; V.S. Klimin; A.A. Rezvan; R.V. Tominov; K. Korzun; I.N. Kots; V.V. Polyakova; O.A. Ageev

doi:10.1088/1742-6596/1410/1/012042

Formation of SiO₂ buffer layer for LiNbO₃ thin films growth

Z.E. Vakulov
, V.S. Klimin
, A.A. Rezvan
, R.V. Tominov
, K. Korzun
, I.N. Kots
, V.V. Polyakova
, O.A. Ageev

Advanced Nanomaterials & Devices

Onderzoeksoutput: Bijdrage aan tijdschrift › Congresartikel › peer review

5 Citaten (Scopus)

84 Downloads (Pure)

Samenvatting

This paper shows the results of study of the effect of SiO₂ buffer layer thickness on the morphological parameters of nanocrystalline LiNbO₃ films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO₂ buffer layer from 10 nm to 50 nm, the roughness of LiNbO₃ films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.

Originele taal-2	Engels
Artikelnummer	012042
Aantal pagina's	5
Tijdschrift	Journal of Physics: Conference Series
Volume	1410
Nummer van het tijdschrift	1
DOI's	https://doi.org/10.1088/1742-6596/1410/1/012042
Status	Gepubliceerd - 20 dec. 2019
Evenement	6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Rusland Duur: 22 apr. 2019 → 25 apr. 2019

Bibliografische nota

Publisher Copyright:
© Published under licence by IOP Publishing Ltd.

Financiering

This work was financially supported by the Russian Foundation for Basic Research (project № 18-29-11019 mk) and Grant of the President of the Russian Federation No. МК-3512.2019.8. The work was done on the equipment of the Research and Education Centre «Nanotechnology», Southern Federal University.

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@article{c403df99149b4333bfa8c08768891a06,

title = "Formation of SiO2 buffer layer for LiNbO3 thin films growth",

abstract = "This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO3 films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.",

author = "Z.E. Vakulov and V.S. Klimin and A.A. Rezvan and R.V. Tominov and K. Korzun and I.N. Kots and V.V. Polyakova and O.A. Ageev",

note = "Funding Information: This work was financially supported by the Russian Foundation for Basic Research (project № 18-29-11019 mk) and Grant of the President of the Russian Federation No. МК-3512.2019.8. The work was done on the equipment of the Research and Education Centre «Nanotechnology», Southern Federal University. Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 ; Conference date: 22-04-2019 Through 25-04-2019",

year = "2019",

month = dec,

day = "20",

doi = "10.1088/1742-6596/1410/1/012042",

language = "English",

volume = "1410",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Formation of SiO2 buffer layer for LiNbO3 thin films growth

AU - Vakulov, Z.E.

AU - Klimin, V.S.

AU - Rezvan, A.A.

AU - Tominov, R.V.

AU - Korzun, K.

AU - Kots, I.N.

AU - Polyakova, V.V.

AU - Ageev, O.A.

N1 - Funding Information: This work was financially supported by the Russian Foundation for Basic Research (project № 18-29-11019 mk) and Grant of the President of the Russian Federation No. МК-3512.2019.8. The work was done on the equipment of the Research and Education Centre «Nanotechnology», Southern Federal University. Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2019/12/20

Y1 - 2019/12/20

N2 - This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO3 films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.

AB - This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO3 films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.

UR - https://www.scopus.com/pages/publications/85078168361

U2 - 10.1088/1742-6596/1410/1/012042

DO - 10.1088/1742-6596/1410/1/012042

M3 - Conference article

AN - SCOPUS:85078168361

SN - 1742-6588

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012042

T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Y2 - 22 April 2019 through 25 April 2019

ER -