TY - JOUR
T1 - Formation of SiO2 buffer layer for LiNbO3 thin films growth
AU - Vakulov, Z.E.
AU - Klimin, V.S.
AU - Rezvan, A.A.
AU - Tominov, R.V.
AU - Korzun, K.
AU - Kots, I.N.
AU - Polyakova, V.V.
AU - Ageev, O.A.
N1 - Funding Information:
This work was financially supported by the Russian Foundation for Basic Research (project № 18-29-11019 mk) and Grant of the President of the Russian Federation No. МК-3512.2019.8. The work was done on the equipment of the Research and Education Centre «Nanotechnology», Southern Federal University.
Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2019/12/20
Y1 - 2019/12/20
N2 - This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO3 films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.
AB - This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO3 films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.
UR - http://www.scopus.com/inward/record.url?scp=85078168361&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1410/1/012042
DO - 10.1088/1742-6596/1410/1/012042
M3 - Conference article
AN - SCOPUS:85078168361
SN - 1742-6588
VL - 1410
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012042
T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019
Y2 - 22 April 2019 through 25 April 2019
ER -