Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

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Originele taal-2	Engels
Pagina's (van-tot)	236-240
Tijdschrift	Physica E: Low-Dimensional Systems & Nanostructures
Volume	26
Nummer van het tijdschrift	1-4
DOI's	https://doi.org/10.1016/j.physe.2004.08.104
Status	Gepubliceerd - 2005

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@article{006e93c0f9a644fd971b8cb1a8aace63,

title = "Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy",

author = "P. Offermans and P.M. Koenraad and J.H. Wolter and K. Pierz and Mervyn Roy and P.A. Maksym",

year = "2005",

doi = "10.1016/j.physe.2004.08.104",

language = "English",

volume = "26",

pages = "236--240",

journal = "Physica E: Low-Dimensional Systems \& Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Wolter, J.H.

AU - Pierz, K.

AU - Roy, Mervyn

AU - Maksym, P.A.

PY - 2005

Y1 - 2005

U2 - 10.1016/j.physe.2004.08.104

DO - 10.1016/j.physe.2004.08.104

M3 - Article

SN - 1386-9477

VL - 26

SP - 236

EP - 240

JO - Physica E: Low-Dimensional Systems & Nanostructures

JF - Physica E: Low-Dimensional Systems & Nanostructures

IS - 1-4

ER -