Flip-chip III-V-to-silicon photonics interfaces for optical sensor

Yves Martin, Jason S. Orcutt, Chi Xiong, Laurent Schares, Tymon Barwicz, Martin Glodde, Swetha Kamlapurkar, Eric J. Zhang, William M.J. Green, Victor Dolores Calzadilla, Ariane Sigmund, Martin Moehrle

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

6 Citaten (Scopus)
3 Downloads (Pure)

Samenvatting

We demonstrate flip-chip solder assembly of InP chips on Silicon-Photonic (Si-Ph) substrates aimed at high volume manufacturing using typical microelectronic lead-free solders. In our show-case application, an InP die is both a light source and a detector in an integrated optical methane gas sensor that operates near 1.6mm. For high-resolution laser absorption spectroscopy sensing, a single-mode tunable laser is desired. We create an external cavity laser with InP as optical gain, butt-coupled to a Si-Ph external cavity, which incorporates the laser's frequency selective elements. For minimal reflection at the InP-Si interface, waveguides are angled to the facet, an index-matching medium is applied between the mating surfaces, and an anti-reflection coating designed for the index-matching medium is applied to the optical coupling facet of InP chip. Sub-micron alignment accuracy is obtained without high-accuracy assembly tooling. Lithographically defined alignment features on both InP and Si components allow reproducible high-accuracy alignment. Interface throughput loss were measured to be as low as 1.4 dB, and interface reflections are more than 30dB smaller than main signal beams.

Originele taal-2Engels
TitelProceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1060-1066
Aantal pagina's7
ISBN van elektronische versie978-1-7281-1499-6
DOI's
StatusGepubliceerd - 1 mei 2019
Evenement69th IEEE Electronic Components and Technology Conference, ECTC 2019 - Las Vegas, Verenigde Staten van Amerika
Duur: 28 mei 201931 mei 2019

Congres

Congres69th IEEE Electronic Components and Technology Conference, ECTC 2019
Land/RegioVerenigde Staten van Amerika
StadLas Vegas
Periode28/05/1931/05/19

Financiering

The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000540. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof. The authors would like to thank the staff at the IBM Microelectronics Research Laboratory and Central Scientific Services for their assistance in the fabrication of the Si-Ph components, as well as Theodore van Kessel, Levente Klein, Ramachandran Muralidhar, and Hendrik Hamann (all of IBM Research) for many discussions.

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