Flexible NAND-like organic ferroelectric memory array

B. Kam; T.H. Ke; A. Chasin; M. Tyagi; C. Cristoferi; K. Tempelaars; A.J.J.M. van Breemen; K. Myny; S. Schols; J. Genoe; G.H. Gelinck; P. Heremans

doi:10.1109/LED.2014.2313029

Flexible NAND-like organic ferroelectric memory array

B. Kam, T.H. Ke, A. Chasin, M. Tyagi, C. Cristoferi, K. Tempelaars, A.J.J.M. van Breemen, K. Myny, S. Schols, J. Genoe, G.H. Gelinck, P. Heremans

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

18 Citaten (Scopus)

Samenvatting

We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

Originele taal-2	Engels
Artikelnummer	6781647
Pagina's (van-tot)	539-541
Aantal pagina's	3
Tijdschrift	IEEE Electron Device Letters
Volume	35
Nummer van het tijdschrift	5
DOI's	https://doi.org/10.1109/LED.2014.2313029
Status	Gepubliceerd - 2014
Extern gepubliceerd	Ja

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10.1109/LED.2014.2313029

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Citeer dit

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title = "Flexible NAND-like organic ferroelectric memory array",

abstract = "We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.",

keywords = "Ferroelectric, memory array., NAND, nonvolatile memory, organic semiconductors",

author = "B. Kam and T.H. Ke and A. Chasin and M. Tyagi and C. Cristoferi and K. Tempelaars and {van Breemen}, A.J.J.M. and K. Myny and S. Schols and J. Genoe and G.H. Gelinck and P. Heremans",

year = "2014",

doi = "10.1109/LED.2014.2313029",

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volume = "35",

pages = "539--541",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers",

number = "5",

}

Flexible NAND-like organic ferroelectric memory array. / Kam, B.; Ke, T.H.; Chasin, A.; Tyagi, M.; Cristoferi, C.; Tempelaars, K.; van Breemen, A.J.J.M.; Myny, K.; Schols, S.; Genoe, J.; Gelinck, G.H.; Heremans, P.

In: IEEE Electron Device Letters, Vol. 35, Nr. 5, 6781647, 2014, blz. 539-541.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

TY - JOUR

T1 - Flexible NAND-like organic ferroelectric memory array

AU - Kam, B.

AU - Ke, T.H.

AU - Chasin, A.

AU - Tyagi, M.

AU - Cristoferi, C.

AU - Tempelaars, K.

AU - van Breemen, A.J.J.M.

AU - Myny, K.

AU - Schols, S.

AU - Genoe, J.

AU - Gelinck, G.H.

AU - Heremans, P.

PY - 2014

Y1 - 2014

N2 - We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

AB - We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

KW - Ferroelectric

KW - memory array.

KW - NAND

KW - nonvolatile memory

KW - organic semiconductors

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DO - 10.1109/LED.2014.2313029

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