Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Maogong Jiang, Guicui Fu, Lorenzo Ceccarelli, He Du, Martin Bendix Fogsgaard, Amir Sajjad Bahman, Yongheng Yang, Francesco Iannuzzo

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

3 Citaten (Scopus)

Samenvatting

This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage VCE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.

Originele taal-2Engels
Titel2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's839-844
Aantal pagina's6
ISBN van elektronische versie978-1-7281-0395-2
ISBN van geprinte versie978-1-7281-0396-9
DOI's
StatusGepubliceerd - sep 2019
Extern gepubliceerdJa
Evenement11th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2019) - The Baltimore Convention Center, Baltimore, Verenigde Staten van Amerika
Duur: 29 sep 20193 okt 2019
Congresnummer: 11
http://www.ieee-ecce.org/2019/

Congres

Congres11th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2019)
Verkorte titelECCE 2019
Land/RegioVerenigde Staten van Amerika
StadBaltimore
Periode29/09/193/10/19
Internet adres

Bibliografische nota

Publisher Copyright:
© 2019 IEEE.

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