Field-free spin-orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interactions

Zilu Wang (Corresponding author), Pingzhi Li, Mouad Fattouhi, Yuxuan Yao, Youri L.W. Van Hees, Casper F. Schippers, Xueying Zhang, Reinoud Lavrijsen, Felipe Garcia-Sanchez, Eduardo Martinez, Albert Fert, Weisheng Zhao (Corresponding author), Bert Koopmans

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Samenvatting

Perpendicular synthetic antiferromagnets (p-SAFs) are of interest for the next generation of ultrafast, high-density spintronic memory and logic devices. However, to efficiently operate their magnetic order by current-induced spin-orbit torques (SOTs), an unfavored high external magnetic field is conventionally required to break the symmetry. Here, we report the field-free SOT switching of a p-SAF through the introduction of an interlayer with Dzyaloshinskii-Moriya interactions (DMIs). We experimentally observe the existence of the DMI interlayer in our SAF sample by an azimuthal angular-dependent anomalous Hall measurement. Deterministic field-free switching is accomplished in such a sample and depicted by macrospin and micromagnetic simulations. The comparison between the uniaxial interlayer DMI and the azimuthal direction-dependent switching behavior strongly suggests its origin from the DMI interlayer. We demonstrate the compatibility of the proposed strategy with magnetic tunnel junction device structure. Our results provide a strategy for p-SAF-based high-performance SOT devices.

Originele taal-2Engels
Artikelnummer101334
Aantal pagina's16
TijdschriftCell Reports. Physical Science
Volume4
Nummer van het tijdschrift4
DOI's
StatusGepubliceerd - 19 apr. 2023

Bibliografische nota

Funding Information:
This work was supported in part by the National Key Research and Development Program of China (grant no. 2022YFB4400200), the National Natural Science Foundation of China (grant nos. 52121001 and 92164206), the International Collaboration Project (grant no. B16001), the Beihang Hefei Innovation Research Institute Project (grant no. BHKX-19-02), the Tencent Foundation through the XPLORER PRIZE, the China Scholarship Council (CSC), and the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement (860060). Z.W. gratefully thanks Daoqian Zhu, Mark De Jong, Wenlong Cai, Sai Li, Houyi Cheng, Ao Du, Jianing Li, and Yngwie Baron for fruitful discussions and technological help. W.Z. initialized and conceived the idea. W.Z. and B.K. co-supervised the project. Z.W. implemented the project advised by R.L. A.F. W.Z. and B.K. Z.W. and P.L. fabricated the devices. Z.W. Y.Y. and X.Z. performed the macrospin simulations. M.F. performed the micromagnetic simulations advised by F.G.-S. and E.M. Z.W. performed the measurements. Z.W. deposited the thin films with help from Y.L.W.V.H. and C.F.S. Z.W. F.G.-S. W.Z. and B.K. wrote the manuscript draft. All authors discussed the results and commented on the manuscript. The authors declare no competing interests.

Funding Information:
This work was supported in part by the National Key Research and Development Program of China (grant no. 2022YFB4400200 ), the National Natural Science Foundation of China (grant nos. 52121001 and 92164206 ), the International Collaboration Project (grant no. B16001 ), the Beihang Hefei Innovation Research Institute Project (grant no. BHKX-19-02 ), the Tencent Foundation through the XPLORER PRIZE, the China Scholarship Council (CSC), and the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement ( 860060 ). Z.W. gratefully thanks Daoqian Zhu, Mark De Jong, Wenlong Cai, Sai Li, Houyi Cheng, Ao Du, Jianing Li, and Yngwie Baron for fruitful discussions and technological help.

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