@inproceedings{73a41a34cb90405685d27708e0fff227,
title = "Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer",
abstract = "Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one consisting of stacked P(VDF-TrFE) nanowires placed over a continuous semiconducting polymer film; the second one consisting of a nanostriped blend layer wherein the semiconducting and ferroelectric components alternate regularly. The devices exhibit significant reversible memory effects, with operating voltages reduced compared to their continuous film equivalent, and with different possible geometries of the channels of free charge carriers accumulating in the semiconductor.",
keywords = "FeFETs, Ferroelectric polymer, Nano-imprint, Nanowires, Organic memory, Semiconducting polymer",
author = "R. Cai and H.G. Kassa and A. Marrani and {van Breemen}, A.J.J.M. and G.H. Gelinck and B. Nysten and Z. Hu and A.M. Jonas",
year = "2015",
doi = "10.1117/12.2185677",
language = "English",
isbn = "9781628417357",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "E.J.W.L. Kratochvil",
booktitle = "Printed Memory and Circuits",
address = "United States",
note = "Printed Memory and Circuits ; Conference date: 09-08-2015 Through 13-08-2015",
}