Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer

Luding Wang, Wenlong Cai, Kaihua Cao, Kewen Shi, Bert Koopmans (Corresponding author), Weisheng Zhao (Corresponding author)

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3 Citaten (Scopus)
116 Downloads (Pure)


Perpendicular magnetic tunnel junctions with double-interface free layer (p-DMTJs), which exhibit enhanced tunnel magnetoresistance (TMR) and thermal stability (Δ) at the nanoscale, have received considerable interest as building blocks for spintronic data storage devices. Heat-assisted magnetic recording (HAMR) techniques have been widely employed in mainstream magnetic storage to enable ultrahigh storage density. However, the data access is achieved by sensing the stray field of the selected magnetic element using a mechanical “read head”, resulting in an unfavorable speed limitation and design complexity. To address this issue, integrating laser-assisted switching with a high-performance magnetic tunnel junction has received interest in spintronic R&D; however, it has not yet been achieved. In this study, we experimentally explored femtosecond (fs) laser-assisted switching in a p-DMTJ device using a direct electrical TMR readout. We demonstrate two reconfigurable switching operations, i.e., binary “write” and unidirectional “reset”, by the interplay of the fs laser and synchronized magnetic field sequence. We further explored the joint effect, and a switching phase diagram was obtained. The effect of the stray field of p-DMTJ, as well as laser helicity, on switching is also discussed. Results show the feasibility of fs laser-assisted writing p-DMTJs, which can pave the way in high-density optospintronic storage applications.

Originele taal-2Engels
Aantal pagina's7
TijdschriftSCIENCE CHINA Information Sciences
Nummer van het tijdschrift4
StatusGepubliceerd - apr. 2022

Bibliografische nota

Publisher Copyright:
© 2021, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.


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