Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma

W.M.M. Kessels; M.C.M. Sanden, van de; R.J. Severens; D.C. Schram

Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma

Plasma & Materials Processing

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic

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Originele taal-2	Engels
Titel	Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,
Redacteuren	P. Fauchais, J. Amouroux
Plaats van productie	New York
Uitgeverij	Begell House Inc.
Pagina's	869-875
ISBN van geprinte versie	1-56700-126-2
Status	Gepubliceerd - 1999

Citeer dit

Kessels, W. M. M., Sanden, van de, M. C. M., Severens, R. J., & Schram, D. C. (1999). Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. In P. Fauchais, & J. Amouroux (editors), Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia, (blz. 869-875). Begell House Inc..

Kessels, W.M.M. ; Sanden, van de, M.C.M. ; Severens, R.J. et al. / Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. redacteur / P. Fauchais ; J. Amouroux. New York : Begell House Inc., 1999. blz. 869-875

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title = "Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma",

author = "W.M.M. Kessels and \{Sanden, van de\}, M.C.M. and R.J. Severens and D.C. Schram",

year = "1999",

language = "English",

isbn = "1-56700-126-2",

pages = "869--875",

editor = "P. Fauchais and J. Amouroux",

booktitle = "Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,",

publisher = "Begell House Inc.",

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Kessels, WMM , Sanden, van de, MCM, Severens, RJ & Schram, DC 1999, Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. in P Fauchais & J Amouroux (reds.), Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. Begell House Inc., New York, blz. 869-875.

Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. / Kessels, W.M.M.; Sanden, van de, M.C.M.; Severens, R.J. et al.
Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. reds. / P. Fauchais; J. Amouroux. New York: Begell House Inc., 1999. blz. 869-875.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic

TY - GEN

T1 - Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

AU - Severens, R.J.

AU - Schram, D.C.

PY - 1999

Y1 - 1999

M3 - Conference contribution

SN - 1-56700-126-2

SP - 869

EP - 875

BT - Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,

A2 - Fauchais, P.

A2 - Amouroux, J.

PB - Begell House Inc.

CY - New York

ER -

Kessels WMM , Sanden, van de MCM, Severens RJ, Schram DC. Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. In Fauchais P, Amouroux J, redacteurs, Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. New York: Begell House Inc. 1999. blz. 869-875