Fabrication of plasmonic structures with well-controlled nanometric features: A comparison between lift-off and ion beam etching

After providing a detailed overview of nanofabrication techniques for plasmonics, we discuss in detail two different approaches for the fabrication of metallic nanostructures based on e-beam lithography. The first approach relies on a negative e-beam resist, followed by ion beam milling, while the second uses a positive e-beam resist and lift-off. Overall, ion beam etching provides smaller and more regular features including tiny gaps between sub-parts, that can be controlled down to about 10 nm. In the lift-off process, the metal atoms are deposited within the resist mask and can diffuse on the substrate, giving rise to the formation of nanoclusters that render the nanostructure outline slightly fuzzy. Scattering cross sections computed for both approaches highlight some spectral differences, which are especially visible for structures that support complex resonances, such as Fano resonances. Both techniques can produce useful nanostructures and the results reported therein should guide the researcher to choose the best-suited approach for a given application, depending on the available technology.