Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP

H.H.J.E. Kicken, I. Barbu, J. Gabriels, R.W. Heijden, van der, R. Nötzel, F. Karouta, H.W.M. Salemink, E.W.J.M. Drift, van der

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy yielding a Q-factor of ~65. The resonance frequency of the defect cavity was shifted, by infiltrating the surrounding holes with both a polymer and liquid crystal. Furthermore, the transmission was enhanced by a factor « 5 as a result of the filling.
Originele taal-2Engels
TitelProceedings of the 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, 25-29 May 2008, Versailles, France
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina'sWeP25-1/4
ISBN van geprinte versie978-1-4244-2258-6
DOI's
StatusGepubliceerd - 2008
Evenement20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) - Versailles, Frankrijk
Duur: 25 mei 200829 mei 2008
Congresnummer: 20

Congres

Congres20th International Conference on Indium Phosphide and Related Materials (IPRM 2008)
Verkorte titelIPRM 2008
LandFrankrijk
StadVersailles
Periode25/05/0829/05/08
Ander20th International Conference on Indium Phosphide and Related Materials IPRM 2008

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