Extremely Large Magnetoresistance in Boron-Doped Silicon

J.J.H.M. Schoonus, F.L. Bloom, W. Wagemans, H.J.M. Swagten, B. Koopmans

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

85 Citaten (Scopus)
157 Downloads (Pure)

Samenvatting

Boron-doped Si-SiO2-Al structures are fabricated to study extremely large magnetoresistance (MR) effects. Current-voltage characteristics show a nonlinear behavior, dominated by an autocatalytic process of impact ionization. At low temperatures, the magnetic field postpones the onset of impact ionization to higher electric fields. This results in a symmetric positive MR of over 10 000% at 400 kA/m. Applying a magnetic field leads to an increase of the acceptor level compared to the valence band as deduced by admittance spectroscopy. A macroscopic transport model is introduced to describe how the MR is controlled by voltage, electrode spacing, and oxide thickness.
Originele taal-2Engels
Artikelnummer127202
Pagina's (van-tot)127202-1/4
TijdschriftPhysical Review Letters
Volume100
Nummer van het tijdschrift12
DOI's
StatusGepubliceerd - 2008

Vingerafdruk

Duik in de onderzoeksthema's van 'Extremely Large Magnetoresistance in Boron-Doped Silicon'. Samen vormen ze een unieke vingerafdruk.

Citeer dit