Explanation for the leakage current in polycrystalline-silicon thin-film transistors made by Ni-silicide mediated crystallization

P.J. van der Zaag, M.A. Verheijen, S.Y. Yoon, N.D. Young

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58 Citaten (Scopus)

Samenvatting

The source of the leakage current in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) made by Ni-mediated crystallization has been investigated. Studies of TFTs and of the crystallization process by in situ transmission electron microscopy show that the crystallization process is a two-stage process and that the cause of the leakage problem is associated with incomplete crystallization of amorphous-Si. By removing the last pockets of amorphous-Si, for instance, by long anneals, poly-Si TFTs can be made with adequately low leakage current <1 pA/μm (at a source-drain voltage of 5 V) for display applications, despite the presence of Ni up to 2.5×10 19atoms/cm3.

Originele taal-2Engels
Pagina's (van-tot)3404-3406
Aantal pagina's3
TijdschriftApplied Physics Letters
Volume81
Nummer van het tijdschrift18
DOI's
StatusGepubliceerd - 28 okt. 2002
Extern gepubliceerdJa

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