Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademic

Samenvatting

Abstract only.
Originele taal-2Engels
TitelHETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 1-2 February 2010, Utrecht, The Netherlands
Plaats van productieUtrecht, the Netherlands
StatusGepubliceerd - 2010
Evenementconference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02 -
Duur: 1 feb 20102 feb 2010

Congres

Congresconference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02
Periode1/02/102/02/10
AnderHETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

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