Excellent Passivation of n‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide

Jimmy Melskens (Corresponding author), R.J. Theeuwes, Lachlan E. Black, Willem-Jan H. Berghuis, Bart Macco, P.C.P. Bronsveld, W.M.M. Kessels

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9 Citaten (Scopus)

Samenvatting

Phosphorus oxide (POx) capped by aluminum oxide (Al2O3), prepared by atomic layer deposition (ALD), has recently been introduced as a surface passivation scheme for planar n‐type FZ silicon. In this work, a fast pulsed‐flow plasma‐enhanced chemical vapor deposition (PECVD) process for the POx layer is introduced, making it possible to increase the POx deposition rate significantly while maintaining the POx/Al2O3 passivation quality. An excellent surface passivation is realized on n‐type planar FZ and Cz substrates (J0 = 3.0 fA cm−2). Furthermore, it is demonstrated that the POx/Al2O3 stack can passivate textured surfaces and that the application of an additional PECVD SiNx capping layer renders the stack stable to a firing treatment that is typically used in fire‐through contact formation (J0 = 12 fA cm−2). The excellent surface passivation is enabled by a high positive fixed charge density (Qf ≈ 4 × 1012 cm−2) and an ultralow interface defect density (Dit ≈ 5 × 1010 eV−1 cm−2). Finally, outstanding passivation is demonstrated on textured silicon with a heavy n+ surface doping, as is used in solar cells, on par with alnealed SiO2. These findings indicate that POx/Al2O3 is a highly suited passivation scheme for n‐type silicon surfaces in typical industrial solar cells.
Originele taal-2Engels
Artikelnummer2000399
Aantal pagina's6
TijdschriftPhysica Status Solidi : Rapid Research Letters
Volume15
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - jan. 2021

Financiering

The authors would like to gratefully acknowledge Dr. R. Niemann and Dr. F. Fertig from Hanwha Q‐Cells GmbH for providing the ‐type diffused substrates and E. Hoek and M. K. Stodolny from TNO Energy Transition for technical support with the SiN depositions and the subsequent firing stability investigation. The authors are grateful for the financial support from the Dutch Ministry of Economic Affairs via the Top‐consortia Knowledge and Innovation (TKI) Program “Transparent Passivating Contact Design for Advanced Solar Cells” (RADAR; TEUE116905) and “Material Independent Rear Passivating Contact Solar Cells” (MIRACLE; TEUE116139). The work of J.M. and B.M. was supported by the Netherlands Organisation for Scientific Research under the Dutch TTW‐VENI Grants 15896 and 16775, respectively. The work of L.E.B. was supported by the Australian Renewable Energy Agency (ARENA) through project RND017. n x The authors would like to gratefully acknowledge Dr. R. Niemann and Dr. F. Fertig from Hanwha Q-Cells GmbH for providing the n-type diffused substrates and E. Hoek and M. K. Stodolny from TNO Energy Transition for technical support with the SiNx depositions and the subsequent firing stability investigation. The authors are grateful for the financial support from the Dutch Ministry of Economic Affairs via the Top-consortia Knowledge and Innovation (TKI) Program ?Transparent Passivating Contact Design for Advanced Solar Cells? (RADAR; TEUE116905) and ?Material Independent Rear Passivating Contact Solar Cells? (MIRACLE; TEUE116139). The work of J.M. and B.M. was supported by the Netherlands Organisation for Scientific Research under the Dutch TTW-VENI Grants 15896 and 16775, respectively. The work of L.E.B. was supported by the Australian Renewable Energy Agency (ARENA) through project RND017.

FinanciersFinanciernummer
Dutch Ministry of Economic Affairs
Top consortia for Knowledge and Innovation
Ministerie van Economische Zaken en KlimaatTEUE116139, TEUE116905
Nederlandse Organisatie voor Wetenschappelijk Onderzoek15896, 16775
Australian Renewable Energy AgencyRND017

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