Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3

Onderzoeksoutput: Bijdrage aan congresOther

Samenvatting

No abstract.
Originele taal-2Engels
StatusGepubliceerd - 2010
Evenementconference; Samsung Electronics; 2010-04-01; 2010-04-01 -
Duur: 1 apr 20101 apr 2010

Congres

Congresconference; Samsung Electronics; 2010-04-01; 2010-04-01
Periode1/04/101/04/10
AnderSamsung Electronics

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Citeer dit

Kessels, W. M. M. (2010). Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3. conference; Samsung Electronics; 2010-04-01; 2010-04-01, .