Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

A.H.M. Smets, J.H. van Helden, M.C.M. van de Sanden

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Originele taal-2	Engels
Titel	CIP'2001 proceedings : 13th International colloquium on plasma processes, June 10-14, 2001, Antibes - Juan-les-Pins, France
Plaats van productie	Paris
Uitgeverij	Société Française du Vide
Pagina's	163-165
Status	Gepubliceerd - 2001
Evenement	13th International Colloquium on Plasma Processes (CIP 2001) - Antibes, Frankrijk Duur: 10 jun. 2001 → 14 jun. 2001

Congres	13th International Colloquium on Plasma Processes (CIP 2001)
Verkorte titel	CIP'2001
Land/Regio	Frankrijk
Stad	Antibes
Periode	10/06/01 → 14/06/01

Citeer dit

Smets, A. H. M., van Helden, J. H., & van de Sanden, M. C. M. (2001). Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. In CIP'2001 proceedings : 13th International colloquium on plasma processes, June 10-14, 2001, Antibes - Juan-les-Pins, France (blz. 163-165). (Le vide; Vol. (2001), Nr. Numero special). Société Française du Vide.

Smets, A.H.M. ; van Helden, J.H. ; van de Sanden, M.C.M. / Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. CIP'2001 proceedings : 13th International colloquium on plasma processes, June 10-14, 2001, Antibes - Juan-les-Pins, France. Paris : Société Française du Vide, 2001. blz. 163-165 (Le vide; Numero special).

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title = "Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique",

author = "A.H.M. Smets and {van Helden}, J.H. and {van de Sanden}, M.C.M.",

year = "2001",

language = "English",

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publisher = "Soci{\'e}t{\'e} Fran{\c c}aise du Vide",

number = "Numero special",

pages = "163--165",

booktitle = "CIP'2001 proceedings : 13th International colloquium on plasma processes, June 10-14, 2001, Antibes - Juan-les-Pins, France",

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Smets, AHM, van Helden, JH & van de Sanden, MCM 2001, Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. in CIP'2001 proceedings : 13th International colloquium on plasma processes, June 10-14, 2001, Antibes - Juan-les-Pins, France. Le vide, nr. Numero special, vol. (2001), Société Française du Vide, Paris, blz. 163-165, 13th International Colloquium on Plasma Processes (CIP 2001), Antibes, Frankrijk, 10/06/01.

Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. / Smets, A.H.M.; van Helden, J.H.; van de Sanden, M.C.M.
CIP'2001 proceedings : 13th International colloquium on plasma processes, June 10-14, 2001, Antibes - Juan-les-Pins, France. Paris: Société Française du Vide, 2001. blz. 163-165 (Le vide; Vol. (2001), Nr. Numero special).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

AU - Smets, A.H.M.

AU - van Helden, J.H.

AU - van de Sanden, M.C.M.

PY - 2001

Y1 - 2001

M3 - Conference contribution

T3 - Le vide

SP - 163

EP - 165

BT - CIP'2001 proceedings : 13th International colloquium on plasma processes, June 10-14, 2001, Antibes - Juan-les-Pins, France

PB - Société Française du Vide

CY - Paris

T2 - 13th International Colloquium on Plasma Processes (CIP 2001)

Y2 - 10 June 2001 through 14 June 2001

ER -