Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode

M. Tapajna; A. Rosova; K. Husekova; F. Roozeboom; E. Dobrocka; K. Frohlich

doi:10.1016/j.mee.2007.04.052

Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode

M. Tapajna, A. Rosova, K. Husekova, F. Roozeboom, E. Dobrocka, K. Frohlich

Applied Physics and Science Education

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

6 Citaten (Scopus)

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We studied the leakage current mechanism in Ru-gated MOS capacitors with ultrathin Hf/sub x/Si/sub 1-x/O/sub y/ gate dielectrics grown by atomic vapour deposition (AVD/sup Reg./). The dielectrics were annealed by rapid thermal annealing in oxygen atmosphere at temperatures ranging from 700 to 1000 degrees C. Temperature dependent current-voltage characteristics exhibit trap-assisted tunneling through the Hf-silicate film annealed at 700 degrees C. The energy trap level is 2 eV below the dielectric conduction band edge. On the other hand, direct tunneling was found to control the leakage current through gate dielectrics annealed at 800 and 900 degrees C. Based on a microstructural study, the trap level was attributed to hafnia oxygen vacancies in the Hf-silicate. [All rights reserved Elsevier]

Originele taal-2	Engels
Pagina's (van-tot)	2366-2369
Tijdschrift	Microelectronic Engineering
Volume	84
Nummer van het tijdschrift	9-10
DOI's	https://doi.org/10.1016/j.mee.2007.04.052
Status	Gepubliceerd - 2007

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10.1016/j.mee.2007.04.052

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@article{918761f46f5a4e3980e39ec5671a66cd,

title = "Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode",

abstract = "We studied the leakage current mechanism in Ru-gated MOS capacitors with ultrathin Hf/sub x/Si/sub 1-x/O/sub y/ gate dielectrics grown by atomic vapour deposition (AVD/sup Reg./). The dielectrics were annealed by rapid thermal annealing in oxygen atmosphere at temperatures ranging from 700 to 1000 degrees C. Temperature dependent current-voltage characteristics exhibit trap-assisted tunneling through the Hf-silicate film annealed at 700 degrees C. The energy trap level is 2 eV below the dielectric conduction band edge. On the other hand, direct tunneling was found to control the leakage current through gate dielectrics annealed at 800 and 900 degrees C. Based on a microstructural study, the trap level was attributed to hafnia oxygen vacancies in the Hf-silicate. [All rights reserved Elsevier]",

author = "M. Tapajna and A. Rosova and K. Husekova and F. Roozeboom and E. Dobrocka and K. Frohlich",

year = "2007",

doi = "10.1016/j.mee.2007.04.052",

language = "English",

volume = "84",

pages = "2366--2369",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "9-10",

}

TY - JOUR

T1 - Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode

AU - Tapajna, M.

AU - Rosova, A.

AU - Husekova, K.

AU - Roozeboom, F.

AU - Dobrocka, E.

AU - Frohlich, K.

PY - 2007

Y1 - 2007

N2 - We studied the leakage current mechanism in Ru-gated MOS capacitors with ultrathin Hf/sub x/Si/sub 1-x/O/sub y/ gate dielectrics grown by atomic vapour deposition (AVD/sup Reg./). The dielectrics were annealed by rapid thermal annealing in oxygen atmosphere at temperatures ranging from 700 to 1000 degrees C. Temperature dependent current-voltage characteristics exhibit trap-assisted tunneling through the Hf-silicate film annealed at 700 degrees C. The energy trap level is 2 eV below the dielectric conduction band edge. On the other hand, direct tunneling was found to control the leakage current through gate dielectrics annealed at 800 and 900 degrees C. Based on a microstructural study, the trap level was attributed to hafnia oxygen vacancies in the Hf-silicate. [All rights reserved Elsevier]

AB - We studied the leakage current mechanism in Ru-gated MOS capacitors with ultrathin Hf/sub x/Si/sub 1-x/O/sub y/ gate dielectrics grown by atomic vapour deposition (AVD/sup Reg./). The dielectrics were annealed by rapid thermal annealing in oxygen atmosphere at temperatures ranging from 700 to 1000 degrees C. Temperature dependent current-voltage characteristics exhibit trap-assisted tunneling through the Hf-silicate film annealed at 700 degrees C. The energy trap level is 2 eV below the dielectric conduction band edge. On the other hand, direct tunneling was found to control the leakage current through gate dielectrics annealed at 800 and 900 degrees C. Based on a microstructural study, the trap level was attributed to hafnia oxygen vacancies in the Hf-silicate. [All rights reserved Elsevier]

U2 - 10.1016/j.mee.2007.04.052

DO - 10.1016/j.mee.2007.04.052

M3 - Article

SN - 0167-9317

VL - 84

SP - 2366

EP - 2369

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 9-10

ER -

Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode

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