Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]

Karsten Arts; J.H. Deijkers; Tahsin Faraz; R.L. Puurunen; W.M.M. Kessels; Harm C.M.  Knoops

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]

Karsten Arts, J.H. Deijkers, Tahsin Faraz, R.L. Puurunen, W.M.M. Kessels, Harm C.M. Knoops

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Originele taal-2	Engels
Uitgeverij	Impedans Plasma Measurement
Aantal pagina's	2
Status	Gepubliceerd - aug. 2020

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Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
Arts, K., Deijkers, J. H., Faraz, T., Puurunen, R. L., Kessels, W. M. M. (Corresponding author) & Knoops, H. C. M. (Corresponding author), 20 jul. 2020, In: Applied Physics Letters. 117, 3, 5 blz., 031602.
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Evidence for Low-energy Ions Influencing Plasma-assisted Atomic Layer Deposition of SiO2: Impact on the Growth per Cycle and Wet Etch Rate
Kessels, W. M. M., 1 sep. 2020, In: ILTPC Newsletter. 6, 1 blz.
Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Professioneel

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title = "Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]",

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AU - Faraz, Tahsin

AU - Puurunen, R.L.

AU - Kessels, W.M.M.

AU - Knoops, Harm C.M.

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Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]

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Onderzoekersoutput

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

Evidence for Low-energy Ions Influencing Plasma-assisted Atomic Layer Deposition of SiO2: Impact on the Growth per Cycle and Wet Etch Rate

Citeer dit