A comparison is made with respect to deposition kinetics and film properties for Sn oxide thin films grown from a variety of precursors in an atm. pressure CVD system. Deposition was performed on glass and Al substrates using the precursors monobutyltin trichloride, dimethyltin dichloride, monomethyltin trichloride, Sn tetrachloride, and tetramethyltin with O as oxidant. Apparent activation energies were calcd. for each precursor using the Arrhenius equation, giving different activation energies for both substrates. The highest deposition rates on both glass and Al substrates at temps.
|Titel||Chemical Vapor Deposition: CVD XV (15th), Toronto, Canada, Spring 2000|
|Redacteuren||M.D. Allendorff, T.M. Besmann|
|Status||Gepubliceerd - 2000|
|ISSN van geprinte versie||1938-6737|