Evaluation of precursors for the chemical vapour deposition of tin oxide

A.M.B. Mol, van, G.R. Alcott, M.H.J.M. Croon, de, C.I.M.A. Spee, J.C. Schouten

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

A comparison is made with respect to deposition kinetics and film properties for Sn oxide thin films grown from a variety of precursors in an atm. pressure CVD system. Deposition was performed on glass and Al substrates using the precursors monobutyltin trichloride, dimethyltin dichloride, monomethyltin trichloride, Sn tetrachloride, and tetramethyltin with O as oxidant. Apparent activation energies were calcd. for each precursor using the Arrhenius equation, giving different activation energies for both substrates. The highest deposition rates on both glass and Al substrates at temps.
Originele taal-2Engels
TitelChemical Vapor Deposition: CVD XV (15th), Toronto, Canada, Spring 2000
RedacteurenM.D. Allendorff, T.M. Besmann
Pagina's765-772
StatusGepubliceerd - 2000

Publicatie series

NaamECS Transactions
Volume2000-13
ISSN van geprinte versie1938-6737

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