Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters

Michael S. Seifner, Alain Dijkstra, Johannes Bernardi, Andreas Steiger-Thirsfeld, Masiar Sistani, Alois Lugstein, Jos E.M. Haverkort, Sven Barth (Corresponding author)

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Uittreksel

Highly oriented Ge0.81Sn0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor–liquid–solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as a sole source of Sn for the formation of the metastable Ge1–xSnx semiconductor material. The strain relaxation for a lattice mismatch of ε = 2.94% between the Ge (111) substrate and the constant Ge0.81Sn0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge1–xSnx structures with diameters in the micrometer range show a 5-fold longer compositional gradient very similar to epitaxial thin-film growth. Effects of the Sn growth promoters’ dimensions on the morphological and compositional evolution of Ge1–xSnx are described. The temperature- and laser power-dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge0.81Sn0.19 (e.g., band gap of 0.3 eV at room temperature). These materials hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid- to near-IR photonics. KEYWORDS:semiconductor nanowires epitaxy direct band gap germanium tin
TaalEngels
Pagina's8047-8054
Aantal pagina's8
TijdschriftACS Nano
Volume13
Nummer van het tijdschrift7
DOI's
StatusGepubliceerd - jul 2019

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    Seifner, M. S., Dijkstra, A., Bernardi, J., Steiger-Thirsfeld, A., Sistani, M., Lugstein, A., ... Barth, S. (2019). Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters. ACS Nano, 13(7), 8047-8054. DOI: 10.1021/acsnano.9b02843
    Seifner, Michael S. ; Dijkstra, Alain ; Bernardi, Johannes ; Steiger-Thirsfeld, Andreas ; Sistani, Masiar ; Lugstein, Alois ; Haverkort, Jos E.M. ; Barth, Sven. / Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters. In: ACS Nano. 2019 ; Vol. 13, Nr. 7. blz. 8047-8054
    @article{cb7b1cc7d306488d8ed909a8e7ce6bc9,
    title = "Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters",
    abstract = "Highly oriented Ge0.81Sn0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor–liquid–solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as a sole source of Sn for the formation of the metastable Ge1–xSnx semiconductor material. The strain relaxation for a lattice mismatch of ε = 2.94{\%} between the Ge (111) substrate and the constant Ge0.81Sn0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge1–xSnx structures with diameters in the micrometer range show a 5-fold longer compositional gradient very similar to epitaxial thin-film growth. Effects of the Sn growth promoters’ dimensions on the morphological and compositional evolution of Ge1–xSnx are described. The temperature- and laser power-dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge0.81Sn0.19 (e.g., band gap of 0.3 eV at room temperature). These materials hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid- to near-IR photonics. KEYWORDS:semiconductor nanowires epitaxy direct band gap germanium tin",
    keywords = "semiconductor, nanowires, epitaxy, direct band gap, germanium, tin",
    author = "Seifner, {Michael S.} and Alain Dijkstra and Johannes Bernardi and Andreas Steiger-Thirsfeld and Masiar Sistani and Alois Lugstein and Haverkort, {Jos E.M.} and Sven Barth",
    year = "2019",
    month = "7",
    doi = "10.1021/acsnano.9b02843",
    language = "English",
    volume = "13",
    pages = "8047--8054",
    journal = "ACS Nano",
    issn = "1936-0851",
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    Seifner, MS, Dijkstra, A, Bernardi, J, Steiger-Thirsfeld, A, Sistani, M, Lugstein, A, Haverkort, JEM & Barth, S 2019, 'Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters' ACS Nano, vol. 13, nr. 7, blz. 8047-8054. DOI: 10.1021/acsnano.9b02843

    Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters. / Seifner, Michael S.; Dijkstra, Alain; Bernardi, Johannes; Steiger-Thirsfeld, Andreas; Sistani, Masiar; Lugstein, Alois; Haverkort, Jos E.M.; Barth, Sven (Corresponding author).

    In: ACS Nano, Vol. 13, Nr. 7, 07.2019, blz. 8047-8054.

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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    T1 - Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters

    AU - Seifner,Michael S.

    AU - Dijkstra,Alain

    AU - Bernardi,Johannes

    AU - Steiger-Thirsfeld,Andreas

    AU - Sistani,Masiar

    AU - Lugstein,Alois

    AU - Haverkort,Jos E.M.

    AU - Barth,Sven

    PY - 2019/7

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    N2 - Highly oriented Ge0.81Sn0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor–liquid–solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as a sole source of Sn for the formation of the metastable Ge1–xSnx semiconductor material. The strain relaxation for a lattice mismatch of ε = 2.94% between the Ge (111) substrate and the constant Ge0.81Sn0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge1–xSnx structures with diameters in the micrometer range show a 5-fold longer compositional gradient very similar to epitaxial thin-film growth. Effects of the Sn growth promoters’ dimensions on the morphological and compositional evolution of Ge1–xSnx are described. The temperature- and laser power-dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge0.81Sn0.19 (e.g., band gap of 0.3 eV at room temperature). These materials hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid- to near-IR photonics. KEYWORDS:semiconductor nanowires epitaxy direct band gap germanium tin

    AB - Highly oriented Ge0.81Sn0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor–liquid–solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as a sole source of Sn for the formation of the metastable Ge1–xSnx semiconductor material. The strain relaxation for a lattice mismatch of ε = 2.94% between the Ge (111) substrate and the constant Ge0.81Sn0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge1–xSnx structures with diameters in the micrometer range show a 5-fold longer compositional gradient very similar to epitaxial thin-film growth. Effects of the Sn growth promoters’ dimensions on the morphological and compositional evolution of Ge1–xSnx are described. The temperature- and laser power-dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge0.81Sn0.19 (e.g., band gap of 0.3 eV at room temperature). These materials hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid- to near-IR photonics. KEYWORDS:semiconductor nanowires epitaxy direct band gap germanium tin

    KW - semiconductor

    KW - nanowires

    KW - epitaxy

    KW - direct band gap

    KW - germanium

    KW - tin

    U2 - 10.1021/acsnano.9b02843

    DO - 10.1021/acsnano.9b02843

    M3 - Article

    VL - 13

    SP - 8047

    EP - 8054

    JO - ACS Nano

    T2 - ACS Nano

    JF - ACS Nano

    SN - 1936-0851

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    ER -

    Seifner MS, Dijkstra A, Bernardi J, Steiger-Thirsfeld A, Sistani M, Lugstein A et al. Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters. ACS Nano. 2019 jul;13(7):8047-8054. Beschikbaar vanaf, DOI: 10.1021/acsnano.9b02843