Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

Mohsen Akbari; Paula Diaz Reigosa; Amir Sajjad Bahman; Lorenzo Ceccarelli; Francesco Iannuzzo; Mohammad Tavakoli Bina

doi:10.23919/EPE.2019.8915545

Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

Mohsen Akbari
, Paula Diaz Reigosa
, Amir Sajjad Bahman
, Lorenzo Ceccarelli
, Francesco Iannuzzo
, Mohammad Tavakoli Bina

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

3 Citaten (Scopus)

Samenvatting

In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.

Originele taal-2	Engels
Titel	2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	9
ISBN van elektronische versie	978-9-0758-1531-3
ISBN van geprinte versie	978-1-7281-2361-5
DOI's	https://doi.org/10.23919/EPE.2019.8915545
Status	Gepubliceerd - sep. 2019
Extern gepubliceerd	Ja
Evenement	2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Via Magazzini del Cotone, Genova, Italië Duur: 3 sep. 2019 → 5 sep. 2019 Congresnummer: 21 http://epe-ecce-conferences.com/epe2019/

Congres

Congres	2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Verkorte titel	EPE 2019 ECCE
Land/Regio	Italië
Stad	Genova
Periode	3/09/19 → 5/09/19
Internet adres	http://epe-ecce-conferences.com/epe2019/

Bibliografische nota

Publisher Copyright:
© 2019 EPE Association.

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10.23919/EPE.2019.8915545

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Akbari, M., Reigosa, P. D., Bahman, A. S., Ceccarelli, L., Iannuzzo, F., & Bina, M. T. (2019). Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages. In 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe Artikel 8915545 Institute of Electrical and Electronics Engineers. https://doi.org/10.23919/EPE.2019.8915545

@inproceedings{ed8abf23b1614f649a3a73ac0da9e240,

title = "Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages",

abstract = "In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.",

keywords = "Device modeling, Emerging technology, IGBT, Thermal design, Thermal stress",

author = "Mohsen Akbari and Reigosa, \{Paula Diaz\} and Bahman, \{Amir Sajjad\} and Lorenzo Ceccarelli and Francesco Iannuzzo and Bina, \{Mohammad Tavakoli\}",

note = "Publisher Copyright: {\textcopyright} 2019 EPE Association.; 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, EPE 2019 ECCE ; Conference date: 03-09-2019 Through 05-09-2019",

year = "2019",

month = sep,

doi = "10.23919/EPE.2019.8915545",

language = "English",

isbn = "978-1-7281-2361-5",

booktitle = "2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

url = "http://epe-ecce-conferences.com/epe2019/",

}

Akbari, M, Reigosa, PD, Bahman, AS, Ceccarelli, L, Iannuzzo, F & Bina, MT 2019, Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages. in 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe., 8915545, Institute of Electrical and Electronics Engineers, 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Genova, Italië, 3/09/19. https://doi.org/10.23919/EPE.2019.8915545

Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages. / Akbari, Mohsen; Reigosa, Paula Diaz; Bahman, Amir Sajjad et al.
2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe. Institute of Electrical and Electronics Engineers, 2019. 8915545.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

AU - Akbari, Mohsen

AU - Reigosa, Paula Diaz

AU - Bahman, Amir Sajjad

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Bina, Mohammad Tavakoli

N1 - Conference code: 21

PY - 2019/9

Y1 - 2019/9

N2 - In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.

AB - In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.

KW - Device modeling

KW - Emerging technology

KW - IGBT

KW - Thermal design

KW - Thermal stress

UR - https://www.scopus.com/pages/publications/85076679561

U2 - 10.23919/EPE.2019.8915545

DO - 10.23919/EPE.2019.8915545

M3 - Conference contribution

AN - SCOPUS:85076679561

SN - 978-1-7281-2361-5

BT - 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

PB - Institute of Electrical and Electronics Engineers

T2 - 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

Y2 - 3 September 2019 through 5 September 2019

ER -

Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

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