Enhancement of the recombination rate of inas quantum dots in a photonic crystal light emitting diode

N.J.G. Chauvin, D.M.J. Bitauld, A. Fiore, L.P. Balet, L. Li, B. Alloing, M. Francardi, A. Gerardino

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

InAs quantum dots emitting at 1.3 Jµm and located inside a photonic crystal membrane nanocavity are studied by electrical pumping. An increase of the recombination rate is observed for quantum dots in resonance with the cavity mode.
Originele taal-2Engels
Titel2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
Plaats van productieVersailles
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's4703072-1/2
ISBN van geprinte versie9781424422593
DOI's
StatusGepubliceerd - 2008
Evenement20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) - Versailles, Frankrijk
Duur: 25 mei 200829 mei 2008
Congresnummer: 20

Congres

Congres20th International Conference on Indium Phosphide and Related Materials (IPRM 2008)
Verkorte titelIPRM 2008
LandFrankrijk
StadVersailles
Periode25/05/0829/05/08
Ander20th International Conference on Indium Phosphide and Related Materials IPRM 2008

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