Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots

V.M. Fomin; V.N. Gladilin; S.N. Klimin; J.T. Devreese; P.M. Koenraad; J.H. Wolter

Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots

V.M. Fomin, V.N. Gladilin, S.N. Klimin, J.T. Devreese, P.M. Koenraad, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.

Originele taal-2	Engels
Titel	18th Gen. Conf. of condensed matter division of the Eur. Physical Society, Montreux, Switzerland
Pagina's	57-
Status	Gepubliceerd - 2000
Evenement	18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000) - Duur: 1 jan. 2000 → …

Congres

Congres	18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000)
Verkorte titel	CMD18
Periode	1/01/00 → …
Ander	18th Gen. Conf. of condensed matter division of the Eur. Physical Society

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@inproceedings{65d726d4de4646ed9424e0463323b385,

title = "Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots",

abstract = "We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ({"}quantum bricks{"}) embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.",

author = "V.M. Fomin and V.N. Gladilin and S.N. Klimin and J.T. Devreese and P.M. Koenraad and J.H. Wolter",

year = "2000",

language = "English",

pages = "57--",

booktitle = "18th Gen. Conf. of condensed matter division of the Eur. Physical Society, Montreux, Switzerland",

note = "18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000), CMD18 ; Conference date: 01-01-2000",

}

Fomin, VM, Gladilin, VN, Klimin, SN, Devreese, JT, Koenraad, PM & Wolter, JH 2000, Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots. in 18th Gen. Conf. of condensed matter division of the Eur. Physical Society, Montreux, Switzerland. blz. 57-, 18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000), 1/01/00.

Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots. / Fomin, V.M.; Gladilin, V.N.; Klimin, S.N. et al.
18th Gen. Conf. of condensed matter division of the Eur. Physical Society, Montreux, Switzerland. 2000. blz. 57-.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots

AU - Fomin, V.M.

AU - Gladilin, V.N.

AU - Klimin, S.N.

AU - Devreese, J.T.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2000

Y1 - 2000

N2 - We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.

AB - We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.

M3 - Conference contribution

SP - 57-

BT - 18th Gen. Conf. of condensed matter division of the Eur. Physical Society, Montreux, Switzerland

T2 - 18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000)

Y2 - 1 January 2000

ER -

Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots

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