We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.
|Titel||18th Gen. Conf. of condensed matter division of the Eur. Physical Society, Montreux, Switzerland|
|Status||Gepubliceerd - 2000|
|Evenement||18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000) - |
Duur: 1 jan 2000 → …
|Congres||18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000)|
|Periode||1/01/00 → …|
|Ander||18th Gen. Conf. of condensed matter division of the Eur. Physical Society|