Enhanced phonon-assisted photoluminescence in InAs/GaAs quantum parallelepiped quantum dots

V.M. Fomin, V.N. Gladilin, S.N. Klimin, J.T. Devreese, P.M. Koenraad, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.
Originele taal-2Engels
Titel18th Gen. Conf. of condensed matter division of the Eur. Physical Society, Montreux, Switzerland
Pagina's57-
StatusGepubliceerd - 2000
Evenement18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000) -
Duur: 1 jan 2000 → …

Congres

Congres18th General Conference of the European Physical Society (EPS) Condensed Matter Division (CMD 2000)
Verkorte titelCMD18
Periode1/01/00 → …
Ander18th Gen. Conf. of condensed matter division of the Eur. Physical Society

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