Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces

Mohamed S. Abdelkhalik, Aleksandr Vaskin, Aimi Abass, Toni López, Jaime Gómez Rivas

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Samenvatting

The control of light emission from InGaN quantum wells (QWs) is crucial for improving the performance of LEDs in various applications. Resonant plasmonic nanostructures were demonstrated to affect the properties of coupled emitters significantly. Here, we fabricate Al nanodisks on top of a GaN/sapphire wafer to control the angular far-field emission and enhance the collected light. This far-field photoluminescence (PL) emission is characterized by Fourier-imaging microscopy. Furthermore, we study the relationship between the PL and the pumping laser power, which is required to obtain enhancement in the collected light. The collection enhancement is up to a factor 3.2.

Originele taal-2Engels
TitelPhotonic and Phononic Properties of Engineered Nanostructures XIII
RedacteurenAli Adibi, Shawn-Yu Lin, Axel Scherer
UitgeverijSPIE
Aantal pagina's3
ISBN van elektronische versie9781510659681
ISBN van geprinte versie9781510659674
DOI's
StatusGepubliceerd - 15 mrt. 2023
EvenementPhotonic and Phononic Properties of Engineered Nanostructures XIII 2023 - San Francisco, Verenigde Staten van Amerika
Duur: 30 jan. 20232 feb. 2023

Publicatie series

NaamProceedings of SPIE
Volume12431
ISSN van geprinte versie0277-786X
ISSN van elektronische versie1996-756X

Congres

CongresPhotonic and Phononic Properties of Engineered Nanostructures XIII 2023
Land/RegioVerenigde Staten van Amerika
StadSan Francisco
Periode30/01/232/02/23

Financiering

This work has been financially supported by the Nederlandse Organisatie voor Wetenschappelijk (NWO), domain Applied and Engineering Sciences (TTW), through grant no 17100 (NanoLEDs).

FinanciersFinanciernummer
Nederlandse Organisatie voor Wetenschappelijk Onderzoek17100

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