Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers

Luding Wang, Youri L.W. van Hees, Reinoud Lavrijsen, Weisheng Zhao (Corresponding author), Bert Koopmans (Corresponding author)

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Samenvatting

All-optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential toward integration with spintronic devices, such as magnetic tunnel junctions (MTJs), to enable ultrafast memory applications. Post-annealing is an essential process in the MTJ fabrication to obtain an optimized tunnel magnetoresistance ratio. However, upon integrating AOS with an MTJ in prospect, the annealing effects on single-pulse AOS and domain wall (DW) dynamics in the Pt/Co/Gd stacks have not been systematically investigated yet. In this study, we experimentally explore the annealing effect on AOS and field-induced DW motion in Pt/Co/Gd stacks. The results show that the threshold fluence (F0) of AOS is reduced significantly as a function of annealing temperature (Ta) ranging from 100 °C to 300 °C. Specifically, a 28% reduction of F0 can be observed upon annealing at 300 °C, which is a critical Ta for MTJ fabrication. Finally, we also demonstrate a significant increase in the DW velocity in the creep regime upon annealing, which is attributed to annealing-induced Co/Gd interface intermixing. Our findings show that the annealed Pt/Co/Gd system facilitates ultrafast and energy-efficient AOS, as well as enhanced DW velocity, which is highly suitable toward opto-spintronic memory applications.

Originele taal-2Engels
Artikelnummer022408
Aantal pagina's5
TijdschriftApplied Physics Letters
Volume117
Nummer van het tijdschrift2
DOI's
StatusGepubliceerd - 13 jul. 2020

Financiering

This work is part of the Gravitation program “Research Centre for Integrated Nanophotonics,” which was financed by the Netherlands Organisation for Scientific Research (NWO). We gratefully acknowledge the National Key Technology Program of China No. 2017ZX01032101, National Natural Science Foundation of China Grant No. 61627813, International Collaboration Project No. B16001, Beihang Hefei Innovation Research Institute Project No. BHKX-17-06, and the China Scholarship Council (CSC) for their financial support of this work.

FinanciersFinanciernummer
Beihang Hefei Innovation Research InstituteBHKX-17-06
International Collaboration ProjectB16001
National Natural Science Foundation of China61627813
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
China Scholarship Council
National Key Research and Development Program of China2017ZX01032101

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