Engineering tunnel junctions on ballistic semiconductor nanowires

J. Damasco, S.T. Gill (Corresponding author), S. Gazibegovic, G. Badawy, E.P.A.M. Bakkers, N. Mason (Corresponding author)

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Uittreksel

Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and enables characterization of nanowire local density of states.

TaalEngels
Artikelnummer043503
Aantal pagina's5
TijdschriftApplied Physics Letters
Volume115
Nummer van het tijdschrift4
DOI's
StatusGepubliceerd - 22 jul 2019

Vingerafdruk

tunnel junctions
ballistics
nanowires
engineering
energy distribution
distribution functions
quantum dots
fabrication
probes
electronics

Citeer dit

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Engineering tunnel junctions on ballistic semiconductor nanowires. / Damasco, J.; Gill, S.T. (Corresponding author); Gazibegovic, S.; Badawy, G.; Bakkers, E.P.A.M.; Mason, N. (Corresponding author).

In: Applied Physics Letters, Vol. 115, Nr. 4, 043503, 22.07.2019.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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AU - Mason,N.

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