Electrorefraction in quantum dots: dependence on lateral size and shape

R. Prasanth, J.E.M. Haverkort, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

2 Citaten (Scopus)

Samenvatting

Photonic switches require low loss polarization independent phase shifting elements. In a composite quantum well, a 0.46 mm phase shifter provides a p/4 phase shift by combining the Quantum Confined Stark Effect (QCSE) and carrier depletion effect. We investigate whether the discrete energy levels and the high peak absorption in quantum dots (QDs) provide an opportunity for increasing the electro-refraction. The electro-refraction in strained cylindrical InAs/GaAs QDs is explored using a numerical model based on the 4×4 Luttinger-Kohn Hamiltonian. The excitonic states are calculated by matrix diagonalization with plane-wave basis states. We observe that the QCSE sharply increases with the height of the QD and is also optimized for small radius QDs. The QCSE in pyramidal QDs is considerably larger than in squares or cylinders. We finally present large electro-refraction in, cone shaped pyramidal QDs.
Originele taal-2Engels
TitelNanotechnology 2003, IEEE-Nano 2003 3rd IEEE Conf., August 12-14 2003 San Francisco, U.S.A.
Plaats van productieSan Francisco, U.S.A.
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's126-129
ISBN van geprinte versie0-7803-7976-4
DOI's
StatusGepubliceerd - 2003
Evenementconference; Nanotechnology 2003, IEEE-Nano 2003, 3rd IEEE Conf. San Francisco, U.S.A.; 2003-08-12; 2003-08-14 -
Duur: 12 aug 200314 aug 2003

Publicatie series

NaamProceedings of the IEEE
Volume1
ISSN van geprinte versie0018-9219

Congres

Congresconference; Nanotechnology 2003, IEEE-Nano 2003, 3rd IEEE Conf. San Francisco, U.S.A.; 2003-08-12; 2003-08-14
Periode12/08/0314/08/03
AnderNanotechnology 2003, IEEE-Nano 2003, 3rd IEEE Conf. San Francisco, U.S.A.

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  • Citeer dit

    Prasanth, R., Haverkort, J. E. M., & Wolter, J. H. (2003). Electrorefraction in quantum dots: dependence on lateral size and shape. In Nanotechnology 2003, IEEE-Nano 2003 3rd IEEE Conf., August 12-14 2003 San Francisco, U.S.A. (blz. 126-129). (Proceedings of the IEEE; Vol. 1). San Francisco, U.S.A.: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NANO.2003.1231731