@inproceedings{34d7b0fcf3fa45a3b67208ea6ab864f6,
title = "Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells",
abstract = "Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.",
author = "Sen, {Mike Ah} and Pierpaolo Spinelli and Benjamin Kikkert and Eelko Hoek and Bart Macco and Arthur Weeber and Paula Bronsveld",
year = "2018",
month = aug,
day = "10",
doi = "10.1063/1.5049264",
language = "English",
isbn = "9780735417151",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics",
booktitle = "SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics",
address = "United States",
note = "SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics ; Conference date: 19-03-2018 Through 21-03-2018",
}