Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing

Haifeng Ling, Dimitrios A. Koutsouras, Setareh Kazemzadeh, Yoeri B. van de Burgt, Feng Yan (Corresponding author), Paschalis Gkoupidenis (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftArtikel recenserenpeer review

183 Citaten (Scopus)
1590 Downloads (Pure)

Samenvatting

Functional emulation of biological synapses using electronic devices is regarded as the first step toward neuromorphic engineering and artificial neural networks (ANNs). Electrolyte-gated transistors (EGTs) are mixed ionic-electronic conductivity devices capable of efficient gate-channel capacitance coupling, biocompatibility, and flexible architectures. Electrolyte gating offers significant advantages for the realization of neuromorphic devices/architectures, including ultralow-voltage operation and the ability to form parallel-interconnected networks with minimal hardwired connectivity. In this review, the most recent developments in EGT-based electronics are introduced with their synaptic behaviors and detailed mechanisms, including short-/long-term plasticity, global regulation phenomena, lateral coupling between device terminals, and spatiotemporal correlated functions. Analog memory phenomena allow for the implementation of perceptron-based ANNs. Due to their mixed-conductivity phenomena, neuromorphic circuits based on EGTs allow for facile interfacing with biological environments. We also discuss the future challenges in implementing low power, high speed, and reliable neuromorphic computing for large-scale ANNs with these neuromorphic devices. The advancement of neuromorphic devices that rely on EGTs highlights the importance of this field for neuromorphic computing and for novel healthcare technologies in the form of adaptable or trainable biointerfacing.

Originele taal-2Engels
Artikelnummer011307
Aantal pagina's22
TijdschriftApplied Physics Reviews
Volume7
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - 1 mrt. 2020

Financiering

F. Yan wishes to thank the Research Grants Council (RGC) of Hong Kong (Project No. C5015-15G) and the Hong Kong Polytechnic University (Project Nos. 1-ZVGH, G-YBJ0, and 1-ZVK1). H. F. Ling wishes to thank the Alexander von Humboldt Foundation for financial support via Humboldt Research Fellowships for Postdoctoral researchers. H. F. Ling also acknowledges the support of the National Natural Science Foundation of China (No. 61905121), the Natural Science Foundation of Jiangsu Province, China (No. BK20190734), and Nanjing University of Posts and Telecommunications Start-up Fund (No. NY219157). Y. van de Burgt acknowledges funding from European Union’s Horizon 2020 Research and Innovation Programme (Grant Agreement No. 802615).

FinanciersFinanciernummer
Alexander von Humboldt Foundation
European Union’s Horizon Europe research and innovation programme802615
National Natural Science Foundation of China61905121
Hong Kong Polytechnic University1-ZVGH, G-YBJ0, 1-ZVK1
Nanjing University of Posts and TelecommunicationsNY219157

    Vingerafdruk

    Duik in de onderzoeksthema's van 'Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing'. Samen vormen ze een unieke vingerafdruk.

    Citeer dit