@inproceedings{f5442baa3be445e2b3a9fdd50862a64e,
title = "Electroforming process in metal-oxide-polymer resistive switching memories",
abstract = "Electroforming of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 17 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.",
keywords = "electroforming softbreakdown, non-volatile memory, Resistive Random Access Memory (RRAM)",
author = "Qian Chen and Gomes, \{Henrique L.\} and Asal Kiazadeh and Rocha, \{Paulo R.F.\} and \{De Leeuw\}, \{Dago M.\} and Meskers, \{Stefan C.J.\}",
year = "2012",
month = jan,
day = "1",
doi = "10.1007/978-3-642-28255-3\_58",
language = "English",
isbn = "978-3-642-28254-6",
series = "IFIP Advances in Information and Communication Technology",
publisher = "Springer",
pages = "527--534",
editor = "L.M. Camarinha-Matos and E. Shahamatnia and G. Nunes",
booktitle = "Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings",
address = "Germany",
note = "3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 ; Conference date: 27-02-2012 Through 29-02-2012",
}