Electroforming process in metal-oxide-polymer resistive switching memories

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, Paulo R.F. Rocha, Dago M. De Leeuw, Stefan C.J. Meskers

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Electroforming of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 17 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.

Originele taal-2Engels
TitelTechnological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings
RedacteurenL.M. Camarinha-Matos, E. Shahamatnia, G. Nunes
Plaats van productieBerlin
UitgeverijSpringer
Pagina's527-534
Aantal pagina's8
ISBN van elektronische versie978-3-642-28255-3
ISBN van geprinte versie978-3-642-28254-6
DOI's
StatusGepubliceerd - 1 jan 2012
Evenement3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 - Costa de Caparica, Portugal
Duur: 27 feb 201229 feb 2012

Publicatie series

NaamIFIP Advances in Information and Communication Technology
Volume372 AICT
ISSN van geprinte versie1868-4238

Congres

Congres3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012
LandPortugal
StadCosta de Caparica
Periode27/02/1229/02/12

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