Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators

Stefania Carapezzi; Gabriele Boschetto; Siegfried Karg; Aida Todri-Sanial

doi:10.1557/s43579-022-00196-3

Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators

Stefania Carapezzi (Corresponding author), Gabriele Boschetto, Siegfried Karg, Aida Todri-Sanial (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

2 Citaten (Scopus)

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Abstract: Vanadium dioxide (VO ₂) devices undergo a thermal insulator-metal-transition by current or voltage injection. In this work, we utilize a dedicated Technology Computer-Aided Design (TCAD) modeling approach to simulate thermal-induced resistive switching effects in VO ₂ devices. In particular, we investigate how the heat dissipation modulates the VO ₂ device behavior. We employ a mixed-mode Simulation Program with Integrated Circuit Emphasis (SPICE)—TCAD approach to simulate the relaxation oscillator circuit based on VO ₂ device, and we show the entangled self-oscillatory behavior of temperature and voltage across the device. Our findings provide essential guidelines for the design of VO ₂ oscillators to be exploited to realize oscillatory neural networks circuits for neuromorphic computing. Graphical Abstract: [Figure not available: see fulltext.]

Originele taal-2	Engels
Pagina's (van-tot)	427-433
Aantal pagina's	7
Tijdschrift	MRS Communications
Volume	12
Nummer van het tijdschrift	4
DOI's	https://doi.org/10.1557/s43579-022-00196-3
Status	Gepubliceerd - aug. 2022
Extern gepubliceerd	Ja

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Publisher Copyright:
© 2022, The Author(s), under exclusive licence to The Materials Research Society.

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10.1557/s43579-022-00196-3

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title = "Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators",

abstract = "Abstract: Vanadium dioxide (VO 2) devices undergo a thermal insulator-metal-transition by current or voltage injection. In this work, we utilize a dedicated Technology Computer-Aided Design (TCAD) modeling approach to simulate thermal-induced resistive switching effects in VO 2 devices. In particular, we investigate how the heat dissipation modulates the VO 2 device behavior. We employ a mixed-mode Simulation Program with Integrated Circuit Emphasis (SPICE)—TCAD approach to simulate the relaxation oscillator circuit based on VO 2 device, and we show the entangled self-oscillatory behavior of temperature and voltage across the device. Our findings provide essential guidelines for the design of VO 2 oscillators to be exploited to realize oscillatory neural networks circuits for neuromorphic computing. Graphical Abstract: [Figure not available: see fulltext.]",

keywords = "Metal-insulator transition, Devices, Nanoelectronics, Neuromorphic",

author = "Stefania Carapezzi and Gabriele Boschetto and Siegfried Karg and Aida Todri-Sanial",

note = "Funding Information: Authors wish to thank Dr. Ahmed Nejim and Dr. Andrew Plews, of Silvaco Europe Ltd., Cambridgeshire, United Kingdom, for providing the customized version of the PCM model used to simulate the VO 2 material as well as for the valuable discussions about the TCAD and mixed-mode simulations. This work was supported by the European Union{\textquoteright}s Horizon 2020 research and innovation programme, EU H2020 NEURONN (www.neuronn.eu) project under Grant 871501. ",

year = "2022",

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doi = "10.1557/s43579-022-00196-3",

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AU - Carapezzi, Stefania

AU - Boschetto, Gabriele

AU - Karg, Siegfried

AU - Todri-Sanial, Aida

N1 - Funding Information: Authors wish to thank Dr. Ahmed Nejim and Dr. Andrew Plews, of Silvaco Europe Ltd., Cambridgeshire, United Kingdom, for providing the customized version of the PCM model used to simulate the VO 2 material as well as for the valuable discussions about the TCAD and mixed-mode simulations. This work was supported by the European Union’s Horizon 2020 research and innovation programme, EU H2020 NEURONN (www.neuronn.eu) project under Grant 871501.

PY - 2022/8

Y1 - 2022/8

N2 - Abstract: Vanadium dioxide (VO 2) devices undergo a thermal insulator-metal-transition by current or voltage injection. In this work, we utilize a dedicated Technology Computer-Aided Design (TCAD) modeling approach to simulate thermal-induced resistive switching effects in VO 2 devices. In particular, we investigate how the heat dissipation modulates the VO 2 device behavior. We employ a mixed-mode Simulation Program with Integrated Circuit Emphasis (SPICE)—TCAD approach to simulate the relaxation oscillator circuit based on VO 2 device, and we show the entangled self-oscillatory behavior of temperature and voltage across the device. Our findings provide essential guidelines for the design of VO 2 oscillators to be exploited to realize oscillatory neural networks circuits for neuromorphic computing. Graphical Abstract: [Figure not available: see fulltext.]

AB - Abstract: Vanadium dioxide (VO 2) devices undergo a thermal insulator-metal-transition by current or voltage injection. In this work, we utilize a dedicated Technology Computer-Aided Design (TCAD) modeling approach to simulate thermal-induced resistive switching effects in VO 2 devices. In particular, we investigate how the heat dissipation modulates the VO 2 device behavior. We employ a mixed-mode Simulation Program with Integrated Circuit Emphasis (SPICE)—TCAD approach to simulate the relaxation oscillator circuit based on VO 2 device, and we show the entangled self-oscillatory behavior of temperature and voltage across the device. Our findings provide essential guidelines for the design of VO 2 oscillators to be exploited to realize oscillatory neural networks circuits for neuromorphic computing. Graphical Abstract: [Figure not available: see fulltext.]

KW - Metal-insulator transition

KW - Devices

KW - Nanoelectronics

KW - Neuromorphic

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DO - 10.1557/s43579-022-00196-3

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JO - MRS Communications

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Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators

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