Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform

Amir Abbas Kashi (Corresponding author), Jos J.G.M. van der Tol, Kevin A. Williams, Weiming Yao, Michael S. Lebby, Cory Pecinovsky, Yuqing Jiao

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Samenvatting

For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a {V}-{ {pi }} {L}-{ {pi }} product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.

Originele taal-2Engels
Artikelnummer9277600
Aantal pagina's10
TijdschriftIEEE Journal of Quantum Electronics
Volume57
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - feb 2021

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