Samenvatting
For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a {V}-{ {pi }} {L}-{ {pi }} product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.
Originele taal-2 | Engels |
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Artikelnummer | 9277600 |
Aantal pagina's | 10 |
Tijdschrift | IEEE Journal of Quantum Electronics |
Volume | 57 |
Nummer van het tijdschrift | 1 |
DOI's | |
Status | Gepubliceerd - feb 2021 |