A method of providing an electric device with a vertical component and the device itself are disclosed. The electric device may be a transistor device, such as a FET device, with a vertical channel, such as a gate around transistor, or double-gate transistor First an elongate structure, such as a nanowire is provided to a substrate. Subsequently, a first conductive layer separated from the substrate and from the elongate structure by a dielectric layer is provided. Further, a second conductive layer being separated from the first conductive layer by a separation layer is being provided in contact with at least a top section of the elongate structure.
|Status||Gepubliceerd - 27 sep 2007|