Efficient green emission from wurtzite AlxIn1-xP nanowires

Luca Gagliano, Marijn Kruijsse, Joris D.D. Schefold, Abderrezak Belabbes, Marcel A. Verheijen, Sophie Meuret, Sebastian Koelling, Albert Polman, Friedhelm Bechstedt, Jos E.M. Haverkort, Erik P.A.M. Bakkers

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

5 Citaties (Scopus)

Uittreksel

Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the "pure green" 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

TaalEngels
Artikelnummer3543-3549
TijdschriftNano Letters
Volume18
DOI's
StatusGepubliceerd - 12 feb 2018

Vingerafdruk

wurtzite
Nanowires
nanowires
Light emitting diodes
Energy gap
Amber
Metallorganic vapor phase epitaxy
light emitting diodes
Light emission
Crystal symmetry
Band structure
phosphides
Density functional theory
Photoluminescence
visible spectrum
vapor phase epitaxy
Transmission electron microscopy
crystals
Infrared radiation
light emission

Trefwoorden

    Citeer dit

    Gagliano, L., Kruijsse, M., Schefold, J. D. D., Belabbes, A., Verheijen, M. A., Meuret, S., ... Bakkers, E. P. A. M. (2018). Efficient green emission from wurtzite AlxIn1-xP nanowires. Nano Letters, 18, [3543-3549]. DOI: 10.1021/acs.nanolett.8b00621
    Gagliano, Luca ; Kruijsse, Marijn ; Schefold, Joris D.D. ; Belabbes, Abderrezak ; Verheijen, Marcel A. ; Meuret, Sophie ; Koelling, Sebastian ; Polman, Albert ; Bechstedt, Friedhelm ; Haverkort, Jos E.M. ; Bakkers, Erik P.A.M./ Efficient green emission from wurtzite AlxIn1-xP nanowires. In: Nano Letters. 2018 ; Vol. 18.
    @article{de22b215d362426689212c2a8f20472b,
    title = "Efficient green emission from wurtzite AlxIn1-xP nanowires",
    abstract = "Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the {"}green gap{"}. Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the {"}pure green{"} 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.",
    keywords = "aluminum indium phosphide, direct band gap, green, Semiconductor nanowire, solid state lighting, wurtzite",
    author = "Luca Gagliano and Marijn Kruijsse and Schefold, {Joris D.D.} and Abderrezak Belabbes and Verheijen, {Marcel A.} and Sophie Meuret and Sebastian Koelling and Albert Polman and Friedhelm Bechstedt and Haverkort, {Jos E.M.} and Bakkers, {Erik P.A.M.}",
    year = "2018",
    month = "2",
    day = "12",
    doi = "10.1021/acs.nanolett.8b00621",
    language = "English",
    volume = "18",
    journal = "Nano Letters",
    issn = "1530-6984",
    publisher = "American Chemical Society",

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    Gagliano, L, Kruijsse, M, Schefold, JDD, Belabbes, A, Verheijen, MA, Meuret, S, Koelling, S, Polman, A, Bechstedt, F, Haverkort, JEM & Bakkers, EPAM 2018, 'Efficient green emission from wurtzite AlxIn1-xP nanowires' Nano Letters, vol. 18, 3543-3549. DOI: 10.1021/acs.nanolett.8b00621

    Efficient green emission from wurtzite AlxIn1-xP nanowires. / Gagliano, Luca; Kruijsse, Marijn; Schefold, Joris D.D.; Belabbes, Abderrezak; Verheijen, Marcel A.; Meuret, Sophie; Koelling, Sebastian; Polman, Albert; Bechstedt, Friedhelm; Haverkort, Jos E.M.; Bakkers, Erik P.A.M.

    In: Nano Letters, Vol. 18, 3543-3549, 12.02.2018.

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

    TY - JOUR

    T1 - Efficient green emission from wurtzite AlxIn1-xP nanowires

    AU - Gagliano,Luca

    AU - Kruijsse,Marijn

    AU - Schefold,Joris D.D.

    AU - Belabbes,Abderrezak

    AU - Verheijen,Marcel A.

    AU - Meuret,Sophie

    AU - Koelling,Sebastian

    AU - Polman,Albert

    AU - Bechstedt,Friedhelm

    AU - Haverkort,Jos E.M.

    AU - Bakkers,Erik P.A.M.

    PY - 2018/2/12

    Y1 - 2018/2/12

    N2 - Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the "pure green" 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

    AB - Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the "pure green" 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

    KW - aluminum indium phosphide

    KW - direct band gap

    KW - green

    KW - Semiconductor nanowire

    KW - solid state lighting

    KW - wurtzite

    UR - http://www.scopus.com/inward/record.url?scp=85046542935&partnerID=8YFLogxK

    U2 - 10.1021/acs.nanolett.8b00621

    DO - 10.1021/acs.nanolett.8b00621

    M3 - Article

    VL - 18

    JO - Nano Letters

    T2 - Nano Letters

    JF - Nano Letters

    SN - 1530-6984

    M1 - 3543-3549

    ER -

    Gagliano L, Kruijsse M, Schefold JDD, Belabbes A, Verheijen MA, Meuret S et al. Efficient green emission from wurtzite AlxIn1-xP nanowires. Nano Letters. 2018 feb 12;18. 3543-3549. Beschikbaar vanaf, DOI: 10.1021/acs.nanolett.8b00621