Efficient green emission from wurtzite AlxIn1-xP nanowires

Luca Gagliano, Marijn Kruijsse, Joris D.D. Schefold, Abderrezak Belabbes, Marcel A. Verheijen, Sophie Meuret, Sebastian Koelling, Albert Polman, Friedhelm Bechstedt, Jos E.M. Haverkort, Erik P.A.M. Bakkers

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

7 Citaten (Scopus)


Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the "pure green" 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

Originele taal-2Engels
Pagina's (van-tot)3543-3549
Aantal pagina's7
TijdschriftNano Letters
Nummer van het tijdschrift6
StatusGepubliceerd - 13 jun 2018


Citeer dit

Gagliano, L., Kruijsse, M., Schefold, J. D. D., Belabbes, A., Verheijen, M. A., Meuret, S., ... Bakkers, E. P. A. M. (2018). Efficient green emission from wurtzite AlxIn1-xP nanowires. Nano Letters, 18(6), 3543-3549. [3543-3549]. https://doi.org/10.1021/acs.nanolett.8b00621