Efficiency enhancement of InP nanowire solar cells by surface cleaning

Y. Cui, J. Wang, S.R. Plissard, A. Cavalli, T.T.T. Vu, P.J. Veldhoven, van, L. Gao, M.J. Trainor, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

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We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.
Originele taal-2Engels
Pagina's (van-tot)4113-4117
Aantal pagina's5
TijdschriftNano Letters
Nummer van het tijdschrift9
StatusGepubliceerd - 2013


Citeer dit

Cui, Y., Wang, J., Plissard, S. R., Cavalli, A., Vu, T. T. T., Veldhoven, van, P. J., ... Bakkers, E. P. A. M. (2013). Efficiency enhancement of InP nanowire solar cells by surface cleaning. Nano Letters, 13(9), 4113-4117. https://doi.org/10.1021/nl4016182