Effects of quantum confinement on low frequency noise in delta-doped GaAs structures grown by MBE

X.Y. Chen, P.M. Koenraad

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Low frequency noise (LEN) was measured in ö-doped GaAs samples in which the free carriers are confined to a 2-dimensional plane. Three samples grown at different temperatures, resulting in doping layers of a different thickness, are used to study the effects of quantum confinement on the LFN. We observed both 1/f noise and generation-recombination (g-r) noise components. We find that a stronger quantum confinement results in a bigger Hall mobility and a lower magnitude of the 1/f noise.
Originele taal-2Engels
TitelNoise in physical systems and 1/f fluctuations : proceedings of the 16th international conference, Gainesville, Florida, USA, 22 - 25 October 2001 / ICNF 2001
RedacteurenGijs Bosman
Plaats van productieSingapore
UitgeverijWorld Scientific
Pagina's509-512
ISBN van geprinte versie981-02-4677-3
StatusGepubliceerd - 2001

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