Samenvatting
Low frequency noise (LEN) was measured in ö-doped GaAs samples in which the free carriers are confined to a 2-dimensional plane. Three samples grown at different temperatures, resulting in doping layers of a different thickness, are used to study the effects of quantum confinement on the LFN. We observed both 1/f noise and generation-recombination (g-r) noise components. We find that a stronger quantum confinement results in a bigger Hall mobility and a lower magnitude of the 1/f noise.
| Originele taal-2 | Engels |
|---|---|
| Titel | Noise in physical systems and 1/f fluctuations : proceedings of the 16th international conference, Gainesville, Florida, USA, 22 - 25 October 2001 / ICNF 2001 |
| Redacteuren | Gijs Bosman |
| Plaats van productie | Singapore |
| Uitgeverij | World Scientific |
| Pagina's | 509-512 |
| ISBN van geprinte versie | 981-02-4677-3 |
| Status | Gepubliceerd - 2001 |