Effects of quantum confinement on low frequency noise in delta-doped GaAs structures grown by MBE

X.Y. Chen, P.M. Koenraad

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Samenvatting

Low frequency noise (LFN) was measured in d-doped GaAs structures in which the free carriers are confined to a 2-dimensional plane. Three samples grown at different temperatures, resulting in doping layers of a different thickness, are used to study the effects of quantum confinement on the LFN. We observed both 1/f noise and generation-recombination noise components. We find that a stronger quantum confinement results in a bigger Hall mobility and a lower magnitude of the 1/f noise.
Originele taal-2Engels
Pagina's (van-tot)L37-L45
TijdschriftFluctuation and Noise Letters
Volume2
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - 2002

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