Dynamic scaling of plasma etched InP surface

M. Silova; D.M. Bruls; A.Y. Silov; B.H. Roy, van; E. Smalbrugge; F. Karouta; P.M. Koenraad; J.H. Wolter

doi:10.1109/ICIPRM.2000.850267

Dynamic scaling of plasma etched InP surface

M. Silova, D.M. Bruls, A.Y. Silov, B.H. Roy, van, E. Smalbrugge, F. Karouta, P.M. Koenraad, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (ß=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP

Originele taal-2	Engels
Titel	Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA
Plaats van productie	New York
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	201-204
ISBN van geprinte versie	0-7803-6320-5
DOI's	https://doi.org/10.1109/ICIPRM.2000.850267
Status	Gepubliceerd - 2000
Evenement	conference; 12th int. conf. on InP and related materials - Duur: 1 jan. 2000 → …

Congres

Congres	conference; 12th int. conf. on InP and related materials
Periode	1/01/00 → …
Ander	12th int. conf. on InP and related materials

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10.1109/ICIPRM.2000.850267

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Silova, M., Bruls, D. M., Silov, A. Y., Roy, van, B. H., Smalbrugge, E., Karouta, F., Koenraad, P. M., & Wolter, J. H. (2000). Dynamic scaling of plasma etched InP surface. In Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA (blz. 201-204). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2000.850267

@inproceedings{ec8b3e79a32242bf972200533f5ad654,

title = "Dynamic scaling of plasma etched InP surface",

abstract = "Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent ({\ss}=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP",

author = "M. Silova and D.M. Bruls and A.Y. Silov and {Roy, van}, B.H. and E. Smalbrugge and F. Karouta and P.M. Koenraad and J.H. Wolter",

year = "2000",

doi = "10.1109/ICIPRM.2000.850267",

language = "English",

isbn = "0-7803-6320-5",

pages = "201--204",

booktitle = "Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "conference; 12th int. conf. on InP and related materials ; Conference date: 01-01-2000",

}

Silova, M, Bruls, DM, Silov, AY, Roy, van, BH, Smalbrugge, E, Karouta, F, Koenraad, PM & Wolter, JH 2000, Dynamic scaling of plasma etched InP surface. in Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA. Institute of Electrical and Electronics Engineers, New York, blz. 201-204, conference; 12th int. conf. on InP and related materials, 1/01/00. https://doi.org/10.1109/ICIPRM.2000.850267

Dynamic scaling of plasma etched InP surface. / Silova, M.; Bruls, D.M.; Silov, A.Y. et al.
Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA. New York: Institute of Electrical and Electronics Engineers, 2000. blz. 201-204.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Dynamic scaling of plasma etched InP surface

AU - Silova, M.

AU - Bruls, D.M.

AU - Silov, A.Y.

AU - Roy, van, B.H.

AU - Smalbrugge, E.

AU - Karouta, F.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2000

Y1 - 2000

N2 - Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (ß=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP

AB - Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (ß=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP

U2 - 10.1109/ICIPRM.2000.850267

DO - 10.1109/ICIPRM.2000.850267

M3 - Conference contribution

SN - 0-7803-6320-5

SP - 201

EP - 204

BT - Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA

PB - Institute of Electrical and Electronics Engineers

CY - New York

T2 - conference; 12th int. conf. on InP and related materials

Y2 - 1 January 2000

ER -

Silova M, Bruls DM, Silov AY, Roy, van BH, Smalbrugge E, Karouta F et al. Dynamic scaling of plasma etched InP surface. In Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA. New York: Institute of Electrical and Electronics Engineers. 2000. blz. 201-204 doi: 10.1109/ICIPRM.2000.850267

Dynamic scaling of plasma etched InP surface

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