Dynamic scaling of plasma etched InP surface

M. Silova, D.M. Bruls, A.Y. Silov, B.H. Roy, van, E. Smalbrugge, F. Karouta, P.M. Koenraad, J.H. Wolter

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Samenvatting

Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (ß=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP
Originele taal-2Engels
TitelProceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA
Plaats van productieNew York
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's201-204
ISBN van geprinte versie0-7803-6320-5
DOI's
StatusGepubliceerd - 2000
Evenementconference; 12th int. conf. on InP and related materials -
Duur: 1 jan 2000 → …

Congres

Congresconference; 12th int. conf. on InP and related materials
Periode1/01/00 → …
Ander12th int. conf. on InP and related materials

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    Silova, M., Bruls, D. M., Silov, A. Y., Roy, van, B. H., Smalbrugge, E., Karouta, F., Koenraad, P. M., & Wolter, J. H. (2000). Dynamic scaling of plasma etched InP surface. In Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA (blz. 201-204). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2000.850267